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	Title	Author(s)	Issue Date
	Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2 Journal:Physical Review Letters	Chen, XD Yang, CL Gong, M Ge, WK Fung, S Beling, CD Wang, JN Lui, MK Ling, CC	2004
	The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire Journal:Journal of Applied Physics	Huang, Y Chen, XD Fung, S Beling, CD Ling, CC Wei, ZF Xu, SJ Zhi, CY	2004
	Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements Journal:Journal of Applied Physics	Tsia, JM Ling, CC Beling, CD Fung, S	2002
	Beryllium implantation induced deep level defects in p-type 6h-silicon carbide Journal:Journal of Applied Physics	Chen, XD Ling, CC Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N	2003
	Deep level defect in Si-implanted GaN n +-p junction Journal:Applied Physics Letters	Chen, XD Huang, Y Fung, S Beling, CD Ling, CC Sheu, JK Lee, ML Chi, GC Chang, SJ	2003
	Positron-annihilation study of compensation defects in InP Journal:Journal of Applied Physics	Shan, YY Deng, AH Ling, CC Fung, S Ling, CD Zhao, YW Sun, TN Sun, NF	2002
	Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence Journal:Applied Physics Letters	Ling, CC Mui, WK Lam, CH Beling, CD Fung, S Lui, MK Cheah, KW Li, KF Zhao, YW Gong, M	2002
	Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC Journal:Journal of Applied Physics	Chen, XD Fung, S Ling, CC Beling, CD Gong, M	2003
	Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes Journal:Journal of Applied Physics	Huang, Y Chen, XD Fung, S Beling, CD Ling, CC	2003
	Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide Journal:Applied Physics Letters	Ling, CC Lui, MK Ma, SK Chen, XD Fung, S Beling, CD	2004
	A simple and inexpensive circuit for emission and capture deep level transient spectroscopy Journal:Review of Scientific Instruments	Reddy, CV Fung, S Beling, CD	1996
	Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide Journal:Applied Physics Letters	Chen, XD Ling, CC Gong, M Fung, S Beling, CD Brauer, G Anwand, W Skorupa, W	2005
	Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states Journal:Applied Physics Letters	Huang, Y Chen, XD Fung, S Beling, CD Ling, CC Dai, XQ Xie, MH	2005
	Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films Journal:Journal of Applied Physics	Wang, RX Beling, CD Fung, S Djurišic, AB Ling, CC Li, S	2005
	Deconvolution of positron annihilation coincidence Doppler broadening spectra using an iterative projected Newton method with non-negativity constraints Journal:Review of Scientific Instruments	Ho, KF Beling, CD Fung, S Cheng, VKW Ng, MK Yip, AM	2003
	Positron-electron autocorrelation function study of E-center in silicon Journal:Journal of Applied Physics	Ho, KF China, HM Baling, CD Fung, S Ng, KP Biasini, M Ferro, G Gong, M	2003
	Influence of silicon-nanocrystal distribution in SiO2 matrix on charge injection and charge decay Journal:Applied Physics Letters	Ng, CY Chen, TP Tse, MS Lim, VSW Fung, S Tseng, AA	2005
	Profile of optical constants of SiO 2 thin films containing Si nanocrystals Journal:Journal of Applied Physics	Chen, TP Liu, Y Tse, MS Fung, S Dong, G	2004
	Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide Journal:Electrochemical and Solid-State Letters	Liu, Y Chen, TP Ng, CY Tse, MS Fung, S Liu, YC Li, S Zhao, P	2004
	Deep level defects in he-implanted n-6H-SiC studied by deep level transient spectroscopy Proceeding/Conference:Materials Research Society Symposium Proceedings	Chen, XD Ling, CC Fung, S Beling, CD Wu, HS Brauer, G Anwand, W Skorupa, W	2004
	Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interface Journal:Journal of Applied Physics	Ng, CY Chen, TP Liu, Y Sun, CQ Fung, S	2004
	A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current Journal:Applied Physics Letters	Huang, J Chen, TP Ang, CH Manju, S Fung, S	2004
	Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam Journal:Journal of Applied Physics	Hu, YF Ling, CC Beling, CD Fung, S	1997
	Formation of P In defect in annealed liquid-encapsulated Czochralski InP Journal:Applied Physics Letters	Zhao, YW Xu, XL Gong, M Fung, S Beling, CD Chen, XD Sun, NF Sun, TN Liu, SL Yang, GY Guo, XB Sun, YZ Wang, L Zheng, QY Zhou, ZH Chen, J	1998
	Deep level traps in the extended tail region of boron-implanted n-type 6H-SiC Journal:Applied Physics Letters	Gong, M Reddy, CV Beling, CD Fung, S Brauer, G Wirth, H Skorupa, W	1998