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Article: Profile of optical constants of SiO 2 thin films containing Si nanocrystals

TitleProfile of optical constants of SiO 2 thin films containing Si nanocrystals
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2004, v. 95 n. 12, p. 8481-8483 How to Cite?
AbstractAn approach of the depth profiling for the thin film synthesized with ion implantation was developed. The nc-Si depth distribution obtained from secondary ion mass spectroscopy measurement was modeled with the approximation of many sublayers. The optical constants of each sublayer were formulated with the nc-Si volume fraction in the sublayer, for a given wavelength. The nc-Si optical constants as variable based on the effective medium approximation. The optical constants of each sublayer were calculated. The depth profiles of the optical constants for the SiO 2 thin film containing the nc-Si were obtained.
Persistent Identifierhttp://hdl.handle.net/10722/42493
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorDong, Gen_HK
dc.date.accessioned2007-01-29T08:51:05Z-
dc.date.available2007-01-29T08:51:05Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Applied Physics, 2004, v. 95 n. 12, p. 8481-8483en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42493-
dc.description.abstractAn approach of the depth profiling for the thin film synthesized with ion implantation was developed. The nc-Si depth distribution obtained from secondary ion mass spectroscopy measurement was modeled with the approximation of many sublayers. The optical constants of each sublayer were formulated with the nc-Si volume fraction in the sublayer, for a given wavelength. The nc-Si optical constants as variable based on the effective medium approximation. The optical constants of each sublayer were calculated. The depth profiles of the optical constants for the SiO 2 thin film containing the nc-Si were obtained.en_HK
dc.format.extent101846 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleProfile of optical constants of SiO 2 thin films containing Si nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=95&issue=12&spage=8481&epage=8483&date=2004&atitle=Profile+of+optical+constants+of+SiO2+thin+films+containing+Si+nanocrystalsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1739282en_HK
dc.identifier.scopuseid_2-s2.0-3142563200en_HK
dc.identifier.hkuros88850-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3142563200&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume95en_HK
dc.identifier.issue12en_HK
dc.identifier.spage8481en_HK
dc.identifier.epage8483en_HK
dc.identifier.isiWOS:000221843400142-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridDong, G=7201472362en_HK

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