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Article: Positron-annihilation study of compensation defects in InP

TitlePositron-annihilation study of compensation defects in InP
Authors
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2002, v. 91 n. 4, p. 1998-2001 How to Cite?
AbstractPositron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700°C, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950°C makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime τ av increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of τ av increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950°C. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42204
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShan, YYen_HK
dc.contributor.authorDeng, AHen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLing, CDen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorSun, NFen_HK
dc.date.accessioned2007-01-08T02:31:34Z-
dc.date.available2007-01-08T02:31:34Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal Of Applied Physics, 2002, v. 91 n. 4, p. 1998-2001en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42204-
dc.description.abstractPositron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700°C, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950°C makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime τ av increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of τ av increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950°C. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. © 2002 American Institute of Physics.en_HK
dc.format.extent68211 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titlePositron-annihilation study of compensation defects in InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=91&issue=4&spage=1998&epage=2001&date=2002&atitle=Positron-annihilation+study+of+compensation+defects+in+InPen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1428796en_HK
dc.identifier.scopuseid_2-s2.0-0037084083en_HK
dc.identifier.hkuros65407-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037084083&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue4en_HK
dc.identifier.spage1998en_HK
dc.identifier.epage2001en_HK
dc.identifier.isiWOS:000173553800036-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShan, YY=7203036700en_HK
dc.identifier.scopusauthoridDeng, AH=7006160354en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLing, CD=15136058400en_HK
dc.identifier.scopusauthoridZhao, YW=8251745900en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK

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