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Article: Experimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes

TitleExperimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodes
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2003, v. 94 n. 9, p. 5771-5775 How to Cite?
AbstractThe influence of screw dislocations on the performance of Au/n-GaN Schottky diodes was investigated. The current-voltage (I-V) characteristics of the diodes fabricated on different GaN templates grown by metallorganic chemical vapor deposition on sapphire substrates were studied. It was shown that these dislocations result in the lowering of the barrier height in the localized regions.
Persistent Identifierhttp://hdl.handle.net/10722/42219
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2007-01-08T02:31:51Z-
dc.date.available2007-01-08T02:31:51Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal Of Applied Physics, 2003, v. 94 n. 9, p. 5771-5775en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42219-
dc.description.abstractThe influence of screw dislocations on the performance of Au/n-GaN Schottky diodes was investigated. The current-voltage (I-V) characteristics of the diodes fabricated on different GaN templates grown by metallorganic chemical vapor deposition on sapphire substrates were studied. It was shown that these dislocations result in the lowering of the barrier height in the localized regions.en_HK
dc.format.extent108235 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleExperimental study and modeling of the influence of screw dislocations on the performance of Au/n-GaN Schottky diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=94&issue=9&spage=5771&epage=5775&date=2003&atitle=Experimental+study+and+modeling+of+the+influence+of+screw+dislocations+on+the+performance+of+Au/n-GaN+Schottky+diodesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1615705en_HK
dc.identifier.scopuseid_2-s2.0-0242468551en_HK
dc.identifier.hkuros84964-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0242468551&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5771en_HK
dc.identifier.epage5775en_HK
dc.identifier.isiWOS:000186138600047-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK

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