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Article: Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements

TitleElectron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements
Authors
Tsia, JMLing, CCBeling, CDFung, S
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2002, v. 92 n. 6, p. 3410-3412 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1503162
AbstractA ±100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (E a=0.81±0.15 eV) and EL6 (E a=0.30±0.12 eV) have been identified. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42209
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000177683000071
References
References in Scopus

 

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dc.contributor.authorTsia, JMen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-08T02:31:40Z-
dc.date.available2007-01-08T02:31:40Z-
dc.date.issued2002en_HK
dc.identifier.citationJournal of Applied Physics, 2002, v. 92 n. 6, p. 3410-3412-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42209-
dc.description.abstractA ±100 V square wave applied to a Au/semi-insulating SI-GaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the positron drift velocity in the region. A deep level transient spectrum was obtained by computing the trap emission rate as a function of temperature and two peaks corresponding to EL2 (E a=0.81±0.15 eV) and EL6 (E a=0.30±0.12 eV) have been identified. © 2002 American Institute of Physics.en_HK
dc.format.extent50497 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2002, v. 92 n. 6, p. 3410-3412 and may be found at https://doi.org/10.1063/1.1503162-
dc.subjectPhysics engineeringen_HK
dc.titleElectron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurementsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=92&issue=6&spage=3410&epage=3412 &date=2002&atitle=Electron+emission+from+deep+level+defects+EL2+and+EL6+in+semi-insulating+GaAs+observed+by+positron+drift+velocity+transient+measurementsen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1503162en_HK
dc.identifier.scopuseid_2-s2.0-18644368289en_HK
dc.identifier.hkuros74830-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-18644368289&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue6en_HK
dc.identifier.spage3410en_HK
dc.identifier.epage3412en_HK
dc.identifier.isiWOS:000177683000071-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridTsia, JM=6507197992en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0021-8979-

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