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Article: Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

TitleInfluence of gaseous annealing environment on the properties of indium-tin-oxide thin films
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2005, v. 97 n. 3 How to Cite?
AbstractThe influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42233
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RXen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorDjurišic, ABen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorLi, Sen_HK
dc.date.accessioned2007-01-08T02:32:07Z-
dc.date.available2007-01-08T02:32:07Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of Applied Physics, 2005, v. 97 n. 3en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42233-
dc.description.abstractThe influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In. © 2005 American Institute of Physics.en_HK
dc.format.extent151669 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of gaseous annealing environment on the properties of indium-tin-oxide thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=97&spage=033504:1&epage=5&date=2005&atitle=Influence+of+gaseous+annealing+environment+on+the+properties+of+indium-tin-oxide+thin+filmsen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailDjurišic, AB: dalek@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityDjurišic, AB=rp00690en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1834984en_HK
dc.identifier.scopuseid_2-s2.0-13644282499en_HK
dc.identifier.hkuros98201-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-13644282499&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume97en_HK
dc.identifier.issue3en_HK
dc.identifier.isiWOS:000226778300010-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RX=22136651200en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridDjurišic, AB=7004904830en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridLi, S=7409241368en_HK

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