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Article: Deep level defect in Si-implanted GaN n +-p junction

TitleDeep level defect in Si-implanted GaN n +-p junction
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673 How to Cite?
AbstractThe results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.
Persistent Identifierhttp://hdl.handle.net/10722/42213
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorSheu, JKen_HK
dc.contributor.authorLee, MLen_HK
dc.contributor.authorChi, GCen_HK
dc.contributor.authorChang, SJen_HK
dc.date.accessioned2007-01-08T02:31:45Z-
dc.date.available2007-01-08T02:31:45Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42213-
dc.description.abstractThe results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.en_HK
dc.format.extent91734 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673 and may be found at https://doi.org/10.1063/1.1578167-
dc.subjectPhysics engineeringen_HK
dc.titleDeep level defect in Si-implanted GaN n +-p junctionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=82&issue=21&spage=3671&epage=3673&date=2003&atitle=Deep+level+defect+in+Si-implanted+GaN+n+-p+junctionen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1578167en_HK
dc.identifier.scopuseid_2-s2.0-0038306938en_HK
dc.identifier.hkuros76469-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038306938&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue21en_HK
dc.identifier.spage3671en_HK
dc.identifier.epage3673en_HK
dc.identifier.isiWOS:000182993700029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridSheu, JK=7201929021en_HK
dc.identifier.scopusauthoridLee, ML=25958232400en_HK
dc.identifier.scopusauthoridChi, GC=7006384706en_HK
dc.identifier.scopusauthoridChang, SJ=35247732700en_HK

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