File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Deep level defect in Si-implanted GaN n +-p junction

TitleDeep level defect in Si-implanted GaN n +-p junction
Authors
Chen, XDHuang, YFung, SBeling, CDLing, CCSheu, JKLee, MLChi, GCChang, SJ
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1578167
AbstractThe results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.
Persistent Identifierhttp://hdl.handle.net/10722/42213
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000182993700029
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorSheu, JKen_HK
dc.contributor.authorLee, MLen_HK
dc.contributor.authorChi, GCen_HK
dc.contributor.authorChang, SJen_HK
dc.date.accessioned2007-01-08T02:31:45Z-
dc.date.available2007-01-08T02:31:45Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42213-
dc.description.abstractThe results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.en_HK
dc.format.extent91734 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673 and may be found at https://doi.org/10.1063/1.1578167-
dc.subjectPhysics engineeringen_HK
dc.titleDeep level defect in Si-implanted GaN n +-p junctionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=82&issue=21&spage=3671&epage=3673&date=2003&atitle=Deep+level+defect+in+Si-implanted+GaN+n+-p+junctionen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1578167en_HK
dc.identifier.scopuseid_2-s2.0-0038306938en_HK
dc.identifier.hkuros76469-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038306938&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue21en_HK
dc.identifier.spage3671en_HK
dc.identifier.epage3673en_HK
dc.identifier.isiWOS:000182993700029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridSheu, JK=7201929021en_HK
dc.identifier.scopusauthoridLee, ML=25958232400en_HK
dc.identifier.scopusauthoridChi, GC=7006384706en_HK
dc.identifier.scopusauthoridChang, SJ=35247732700en_HK
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats