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Article: Deep level defect in Si-implanted GaN n +-p junction

TitleDeep level defect in Si-implanted GaN n +-p junction
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673 How to Cite?
AbstractThe results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.
Persistent Identifierhttp://hdl.handle.net/10722/42213
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorSheu, JKen_HK
dc.contributor.authorLee, MLen_HK
dc.contributor.authorChi, GCen_HK
dc.contributor.authorChang, SJen_HK
dc.date.accessioned2007-01-08T02:31:45Z-
dc.date.available2007-01-08T02:31:45Z-
dc.date.issued2003en_HK
dc.identifier.citationApplied Physics Letters, 2003, v. 82 n. 21, p. 3671-3673en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42213-
dc.description.abstractThe results of deep level transient spectroscopy (DLTS) experiments on GaN junctions, fabricated by silicon implantation, were discussed. An unusual appearance of a minority peak in the majority carrier DLTS spectra within the interfacial region of the junctions was observed. The presence of this minority peak suggested a high concentration of a deep level defect within the interfacial region.en_HK
dc.format.extent91734 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleDeep level defect in Si-implanted GaN n +-p junctionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=82&issue=21&spage=3671&epage=3673&date=2003&atitle=Deep+level+defect+in+Si-implanted+GaN+n+-p+junctionen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1578167en_HK
dc.identifier.scopuseid_2-s2.0-0038306938en_HK
dc.identifier.hkuros76469-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038306938&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue21en_HK
dc.identifier.spage3671en_HK
dc.identifier.epage3673en_HK
dc.identifier.isiWOS:000182993700029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridSheu, JK=7201929021en_HK
dc.identifier.scopusauthoridLee, ML=25958232400en_HK
dc.identifier.scopusauthoridChi, GC=7006384706en_HK
dc.identifier.scopusauthoridChang, SJ=35247732700en_HK

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