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Article: Current transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states

TitleCurrent transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface states
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 12, p. 1-3 How to Cite?
AbstractHeterostructures of n-GaNn-6H-SiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. Using different contact configurations, the I-V results reveal a rectifying barrier in the n-GaNn-6H-SiC heterostructures. When GaN is negatively biased, the current is exponentially proportional to the applied voltage with the built-in barrier being 0.4-1.1 eV for the HVPE samples and 0.5 eV for the MBE sample. DLTS measurements reveal intense band-like deep level states in the interfacial region of the heterostructure, and the Fermi-level pinning by these deep level defects is invoked to account for the interfacial rectifying barrier of the heterostructures. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42232
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorDai, XQen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2007-01-08T02:32:06Z-
dc.date.available2007-01-08T02:32:06Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 12, p. 1-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42232-
dc.description.abstractHeterostructures of n-GaNn-6H-SiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. Using different contact configurations, the I-V results reveal a rectifying barrier in the n-GaNn-6H-SiC heterostructures. When GaN is negatively biased, the current is exponentially proportional to the applied voltage with the built-in barrier being 0.4-1.1 eV for the HVPE samples and 0.5 eV for the MBE sample. DLTS measurements reveal intense band-like deep level states in the interfacial region of the heterostructure, and the Fermi-level pinning by these deep level defects is invoked to account for the interfacial rectifying barrier of the heterostructures. © 2005 American Institute of Physics.en_HK
dc.format.extent67225 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleCurrent transport property of n-GaN/n-6H-SiC heterojunction: Influence of interface statesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&spage=122102:1&epage=3&date=2005&atitle=Current+transport+property+of+n-GaN/n-6H-SiC+heterojunction:+Influence+of+interface+statesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1886906en_HK
dc.identifier.scopuseid_2-s2.0-17944371362en_HK
dc.identifier.hkuros97464-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-17944371362&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1en_HK
dc.identifier.epage3en_HK
dc.identifier.isiWOS:000228050900037-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridDai, XQ=55237280400en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.citeulike1452013-

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