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Article: Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam

TitleSaturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam
Authors
KeywordsPhysics engineering
Issue Date1997
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1997, v. 82 n. 8, p. 3891-3899 How to Cite?
AbstractThe interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages (less than 50 V) which at higher biases tends towards saturation This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (∼1 kV cm-1) found at the unbiased junction, with a rapid increase of EL2+ neutralization occurring for biases above 10 V. At still higher fields ∼10 kV cm-1 (biases>50 V), there appears to be an additional threshold for more complete EL2+ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III-V semiconductors where surface midgap Fermi-level pinning is common. © 1997 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42179
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHu, YFen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-08T02:31:07Z-
dc.date.available2007-01-08T02:31:07Z-
dc.date.issued1997en_HK
dc.identifier.citationJournal Of Applied Physics, 1997, v. 82 n. 8, p. 3891-3899en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42179-
dc.description.abstractThe interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages (less than 50 V) which at higher biases tends towards saturation This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (∼1 kV cm-1) found at the unbiased junction, with a rapid increase of EL2+ neutralization occurring for biases above 10 V. At still higher fields ∼10 kV cm-1 (biases>50 V), there appears to be an additional threshold for more complete EL2+ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III-V semiconductors where surface midgap Fermi-level pinning is common. © 1997 American Institute of Physics.en_HK
dc.format.extent164627 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleSaturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beamen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=82&issue=8&spage=3891&epage=3899&date=1997&atitle=Saturated+electric+field+effect+at+semi-insulating+GaAs-metal+junctions+studied+with+a+low+energy+positron+beamen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.365693en_HK
dc.identifier.scopuseid_2-s2.0-0001126889en_HK
dc.identifier.hkuros28858-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001126889&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume82en_HK
dc.identifier.issue8en_HK
dc.identifier.spage3891en_HK
dc.identifier.epage3899en_HK
dc.identifier.isiWOS:A1997YA57200034-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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