File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide

TitleAnomalous behaviors of E1 E2 deep level defects in 6H silicon carbide
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 3, p. 1-3 How to Cite?
AbstractDeep level defects E1 E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n -type 6H-SiC. Similar to others' results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E1 E2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E1 E2. The activation energy and the capture cross section of this defect are EC -0.31 eV and σ∼8× 10-14 cm2, respectively. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42230
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2007-01-08T02:32:04Z-
dc.date.available2007-01-08T02:32:04Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 3, p. 1-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42230-
dc.description.abstractDeep level defects E1 E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n -type 6H-SiC. Similar to others' results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E1 E2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E1 E2. The activation energy and the capture cross section of this defect are EC -0.31 eV and σ∼8× 10-14 cm2, respectively. © 2005 American Institute of Physics.en_HK
dc.format.extent98020 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleAnomalous behaviors of E1 E2 deep level defects in 6H silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&spage=031903:1&epage=3&date=2005&atitle=Anomalous+behaviors+of+E1/E2+deep+level+defects+in+6H+silicon+carbideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1853523en_HK
dc.identifier.scopuseid_2-s2.0-17044434284en_HK
dc.identifier.hkuros97025-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-17044434284&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue3en_HK
dc.identifier.spage1en_HK
dc.identifier.epage3en_HK
dc.identifier.isiWOS:000226864600015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=15031490600en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats