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Article: Influence of silicon-nanocrystal distribution in SiO 2 matrix on charge injection and charge decay

TitleInfluence of silicon-nanocrystal distribution in SiO 2 matrix on charge injection and charge decay
Authors
KeywordsPhysics engineering
Issue Date2005
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2005, v. 86 n. 15, p. 1-3 How to Cite?
AbstractInfluence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si. © 2005 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42505
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorNg, CYen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorLim, VSWen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorTseng, AAen_HK
dc.date.accessioned2007-01-29T08:51:19Z-
dc.date.available2007-01-29T08:51:19Z-
dc.date.issued2005en_HK
dc.identifier.citationApplied Physics Letters, 2005, v. 86 n. 15, p. 1-3en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42505-
dc.description.abstractInfluence of distribution of silicon nanocrystals (nc-Si) embedded in SiO2 matrix on charge injection and charge decay of the nc-Si has been investigated with electrostatic force microscopy. For nc-Si distributing in the surface region, the size of charge cloud does not change with decay time, and neighboring charges have no influence on the charge decay. In contrast, for nc-Si distributing away from the surface, the size linearly increases with decay time, and the neighboring charges can either accelerate or resist the charge decay depending on their charge signs. In addition, the characteristic decay time for the first distribution is much shorter than that for the second distribution. These results provide an insight into the dissipation mechanism of the charges stored in the nc-Si. © 2005 American Institute of Physics.en_HK
dc.format.extent94912 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of silicon-nanocrystal distribution in SiO 2 matrix on charge injection and charge decayen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=86&issue=15&spage=152110:1&epage=3&date=2005&atitle=Influence+of+silicon-nanocrystal+distribution+in+SiO2+matrix+on+charge+injection+and+charge+decayen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1901831en_HK
dc.identifier.scopuseid_2-s2.0-20844437726en_HK
dc.identifier.hkuros97823-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-20844437726&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue15en_HK
dc.identifier.spage1en_HK
dc.identifier.epage3en_HK
dc.identifier.isiWOS:000228901600055-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridLim, VSW=8604409100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridTseng, AA=7102916705en_HK

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