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Article: Deep level traps in the extended tail region of boron-implanted n-type 6H-SiC

TitleDeep level traps in the extended tail region of boron-implanted n-type 6H-SiC
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 72 n. 21, p. 2739-2741 How to Cite?
AbstractDeep traps in the boron extended tail region of ion implanted 6H-SiC pn junctions formed during annealing have been studied using deep level transient spectroscopy. Dramatically high concentrations of ∼1016 cm-3 of the D center have been observed through the unusual appearance of minority peaks in the majority carrier spectra. No evidence is found for any shallow boron acceptor in this region, but an induced hole trap Ih at EV+0.46 eV is found under cold implantation conditions. These results support the picture of the extended tail, rich in boron-vacancy complexes such as the D center, which forms as a result of vacancy enhanced indiffusion. The dominance of the electrically active D center in the depletion layer of the technologically important SiC pn junction diode suggests the need for further research in this area. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42181
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGong, Men_HK
dc.contributor.authorReddy, CVen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorWirth, Hen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2007-01-08T02:31:09Z-
dc.date.available2007-01-08T02:31:09Z-
dc.date.issued1998en_HK
dc.identifier.citationApplied Physics Letters, 1998, v. 72 n. 21, p. 2739-2741en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42181-
dc.description.abstractDeep traps in the boron extended tail region of ion implanted 6H-SiC pn junctions formed during annealing have been studied using deep level transient spectroscopy. Dramatically high concentrations of ∼1016 cm-3 of the D center have been observed through the unusual appearance of minority peaks in the majority carrier spectra. No evidence is found for any shallow boron acceptor in this region, but an induced hole trap Ih at EV+0.46 eV is found under cold implantation conditions. These results support the picture of the extended tail, rich in boron-vacancy complexes such as the D center, which forms as a result of vacancy enhanced indiffusion. The dominance of the electrically active D center in the depletion layer of the technologically important SiC pn junction diode suggests the need for further research in this area. © 1998 American Institute of Physics.en_HK
dc.format.extent75945 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleDeep level traps in the extended tail region of boron-implanted n-type 6H-SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=72&issue=21&spage=2739&epage=2741&date=1998&atitle=Deep+level+traps+in+the+extended+tail+region+of+boron-implanted+n-type+6H–SiCen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.121076en_HK
dc.identifier.scopuseid_2-s2.0-0000712002en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000712002&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume72en_HK
dc.identifier.issue21en_HK
dc.identifier.spage2739en_HK
dc.identifier.epage2741en_HK
dc.identifier.isiWOS:000075273500038-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridReddy, CV=8621657000en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridWirth, H=7103085274en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK

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