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Article: Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

TitleNature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide
Authors
Ling, CCLui, MKMa, SKChen, XDFung, SBeling, CD
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 85 n. 3, p. 384-386 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1773934
AbstractThe acceptors in undoped liquid encapsulated Czochralski (LEC)-grown GaSb were investigated using temperature dependent Hall (TDH) and positron lifetime spectroscopy measurements. TDH measurements were performed on nonirradiated and electron irradiated undoped samples. The 34 meV acceptor was found to be the important one responsible for the p-type conduction in nonirradiated and the e--irradiated undoped materials annealed at temperatures up to 500°C. This acceptor was not related to any VGa-related defect detected and was most likely the GaSb antisite.
Persistent Identifierhttp://hdl.handle.net/10722/42226
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000222680400012
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorLui, MKen_HK
dc.contributor.authorMa, SKen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:59Z-
dc.date.available2007-01-08T02:31:59Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 85 n. 3, p. 384-386-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42226-
dc.description.abstractThe acceptors in undoped liquid encapsulated Czochralski (LEC)-grown GaSb were investigated using temperature dependent Hall (TDH) and positron lifetime spectroscopy measurements. TDH measurements were performed on nonirradiated and electron irradiated undoped samples. The 34 meV acceptor was found to be the important one responsible for the p-type conduction in nonirradiated and the e--irradiated undoped materials annealed at temperatures up to 500°C. This acceptor was not related to any VGa-related defect detected and was most likely the GaSb antisite.en_HK
dc.format.extent60507 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2004, v. 85 n. 3, p. 384-386 and may be found at https://doi.org/10.1063/1.1773934-
dc.subjectPhysics engineeringen_HK
dc.titleNature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=85&issue=3&spage=384&epage=386&date=2004&atitle=Nature+of+the+acceptor+responsible+for+p-type+conduction+in+liquid+encapsulated+Czochralski-grown+undoped+gallium+antimonideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1773934en_HK
dc.identifier.scopuseid_2-s2.0-4043160510en_HK
dc.identifier.hkuros91994-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-4043160510&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue3en_HK
dc.identifier.spage384en_HK
dc.identifier.epage386en_HK
dc.identifier.isiWOS:000222680400012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridMa, SK=7403725465en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0003-6951-

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