File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current

TitleA quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 85 n. 18, p. 4211-4213 How to Cite?
AbstractIn this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42498
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, Jen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorAng, CHen_HK
dc.contributor.authorManju, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2007-01-29T08:51:11Z-
dc.date.available2007-01-29T08:51:11Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 85 n. 18, p. 4211-4213en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42498-
dc.description.abstractIn this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study. © 2004 American Institute of Physics.en_HK
dc.format.extent78696 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleA quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage currenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=85&issue=18&spage=4211&epage=4213&date=2004&atitle=A+quantitative+study+of+the+relationship+between+the+oxide+charge+trapping+over+the+drain+extension+and+the+off-state+drain+leakage+currenten_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1810211en_HK
dc.identifier.scopuseid_2-s2.0-10044271093en_HK
dc.identifier.hkuros96343-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-10044271093&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue18en_HK
dc.identifier.spage4211en_HK
dc.identifier.epage4213en_HK
dc.identifier.isiWOS:000224894900085-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHuang, J=7407188184en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridAng, CH=7102878370en_HK
dc.identifier.scopusauthoridManju, S=8608813900en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats