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Article: Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2

TitleLow energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2
Authors
KeywordsPhysics
Issue Date2004
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2004, v. 92 n. 12, p. 125504-1 How to Cite?
AbstractThe deep level defects in 6H-SiC induced by low energy electron irradiation was investigated. Electron energies of 0.2, 0.3, 0.5 and 1.7 MeV were used to produce the deep level defects in the n-type 6H-SiC materials. The deep level transient spectroscopy (DLTS) technique, combined with isochronal thermal annealing experiments, was used for the study of the defects. It was observed that deep levels ED1, E1/E2 and Ei were created with irradiation energies of 0.3 MeV or greater than that. The deep levels were found to be associated with primary atom displacement on the C atom of SiC sublattice and had microstructure containing the carbon vacancy.
Persistent Identifierhttp://hdl.handle.net/10722/42224
ISSN
2015 Impact Factor: 7.645
2015 SCImago Journal Rankings: 3.731
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorYang, CLen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorLui, MKen_HK
dc.contributor.authorLing, CCen_HK
dc.date.accessioned2007-01-08T02:31:57Z-
dc.date.available2007-01-08T02:31:57Z-
dc.date.issued2004en_HK
dc.identifier.citationPhysical Review Letters, 2004, v. 92 n. 12, p. 125504-1en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42224-
dc.description.abstractThe deep level defects in 6H-SiC induced by low energy electron irradiation was investigated. Electron energies of 0.2, 0.3, 0.5 and 1.7 MeV were used to produce the deep level defects in the n-type 6H-SiC materials. The deep level transient spectroscopy (DLTS) technique, combined with isochronal thermal annealing experiments, was used for the study of the defects. It was observed that deep levels ED1, E1/E2 and Ei were created with irradiation energies of 0.3 MeV or greater than that. The deep levels were found to be associated with primary atom displacement on the C atom of SiC sublattice and had microstructure containing the carbon vacancy.en_HK
dc.format.extent197884 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review Letters. Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleLow energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=92&issue=12&spage=125504:1&epage=4&date=2004&atitle=Low+Energy+Electron+Irradiation+Induced+Deep+Level+Defects+in+6H–SiC:+The+Implication+for+the+Microstructure+of+the+Deep+Levels+E1/E2en_HK
dc.identifier.emailYang, CL: yangchl@HKUCC.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityYang, CL=rp00824en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevLett.92.125504en_HK
dc.identifier.scopuseid_2-s2.0-2442447104en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2442447104&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue12en_HK
dc.identifier.spage125504en_HK
dc.identifier.epage1en_HK
dc.identifier.isiWOS:000220524600033-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridYang, CL=7407022337en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWang, JN=7701333904en_HK
dc.identifier.scopusauthoridLui, MK=7004991693en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK

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