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Article: Positron-electron autocorrelation function study of E-center in silicon

TitlePositron-electron autocorrelation function study of E-center in silicon
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2003, v. 94 n. 9, p. 5549-5555 How to Cite?
AbstractA study was conducted on the positron-electron autocorrelation function of defect center in silicon. The positron annihilation lifetime spectroscopy (PALS) spectra taken on the as-grown and defected samples of silicon were studied. It was found that the positron binding energy to the defect could be estimated from the ratio of the positron-electron autocorrelates for bulk crystal and defect trapped positron states.
Persistent Identifierhttp://hdl.handle.net/10722/42127
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHo, KFen_HK
dc.contributor.authorChina, HMen_HK
dc.contributor.authorBaling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorNg, KPen_HK
dc.contributor.authorBiasini, Men_HK
dc.contributor.authorFerro, Gen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-01-08T02:29:44Z-
dc.date.available2007-01-08T02:29:44Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal of Applied Physics, 2003, v. 94 n. 9, p. 5549-5555-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42127-
dc.description.abstractA study was conducted on the positron-electron autocorrelation function of defect center in silicon. The positron annihilation lifetime spectroscopy (PALS) spectra taken on the as-grown and defected samples of silicon were studied. It was found that the positron binding energy to the defect could be estimated from the ratio of the positron-electron autocorrelates for bulk crystal and defect trapped positron states.en_HK
dc.format.extent280792 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2003, v. 94 n. 9, p. 5549-5555 and may be found at https://doi.org/10.1063/1.1613368-
dc.subjectPhysics engineeringen_HK
dc.titlePositron-electron autocorrelation function study of E-center in siliconen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=94&issue=9&spage=5549&epage=5555&date=2003&atitle=Positron–electron+autocorrelation+function+study+of+E-center+in+siliconen_HK
dc.identifier.emailBaling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBaling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1613368en_HK
dc.identifier.scopuseid_2-s2.0-0242413066en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0242413066&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5549en_HK
dc.identifier.epage5555en_HK
dc.identifier.isiWOS:000186138600012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHo, KF=7403581787en_HK
dc.identifier.scopusauthoridChina, HM=6601981392en_HK
dc.identifier.scopusauthoridBaling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridNg, KP=7403178813en_HK
dc.identifier.scopusauthoridBiasini, M=34767905500en_HK
dc.identifier.scopusauthoridFerro, G=7102149764en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK

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