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Article: Positron-electron autocorrelation function study of E-center in silicon

TitlePositron-electron autocorrelation function study of E-center in silicon
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2003, v. 94 n. 9, p. 5549-5555 How to Cite?
AbstractA study was conducted on the positron-electron autocorrelation function of defect center in silicon. The positron annihilation lifetime spectroscopy (PALS) spectra taken on the as-grown and defected samples of silicon were studied. It was found that the positron binding energy to the defect could be estimated from the ratio of the positron-electron autocorrelates for bulk crystal and defect trapped positron states.
Persistent Identifierhttp://hdl.handle.net/10722/42127
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHo, KFen_HK
dc.contributor.authorChina, HMen_HK
dc.contributor.authorBaling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorNg, KPen_HK
dc.contributor.authorBiasini, Men_HK
dc.contributor.authorFerro, Gen_HK
dc.contributor.authorGong, Men_HK
dc.date.accessioned2007-01-08T02:29:44Z-
dc.date.available2007-01-08T02:29:44Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal Of Applied Physics, 2003, v. 94 n. 9, p. 5549-5555en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42127-
dc.description.abstractA study was conducted on the positron-electron autocorrelation function of defect center in silicon. The positron annihilation lifetime spectroscopy (PALS) spectra taken on the as-grown and defected samples of silicon were studied. It was found that the positron binding energy to the defect could be estimated from the ratio of the positron-electron autocorrelates for bulk crystal and defect trapped positron states.en_HK
dc.format.extent280792 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titlePositron-electron autocorrelation function study of E-center in siliconen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=94&issue=9&spage=5549&epage=5555&date=2003&atitle=Positron–electron+autocorrelation+function+study+of+E-center+in+siliconen_HK
dc.identifier.emailBaling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBaling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1613368en_HK
dc.identifier.scopuseid_2-s2.0-0242413066en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0242413066&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume94en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5549en_HK
dc.identifier.epage5555en_HK
dc.identifier.isiWOS:000186138600012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHo, KF=7403581787en_HK
dc.identifier.scopusauthoridChina, HM=6601981392en_HK
dc.identifier.scopusauthoridBaling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridNg, KP=7403178813en_HK
dc.identifier.scopusauthoridBiasini, M=34767905500en_HK
dc.identifier.scopusauthoridFerro, G=7102149764en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK

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