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Article: Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide

TitleCharging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide
Authors
KeywordsChemistry engineering
Chemical engineering
Issue Date2004
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/
Citation
Electrochemical And Solid-State Letters, 2004, v. 7 n. 7, p. G134-G137 How to Cite?
AbstractWe report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current-voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as- fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si tunneling paths due to charge trapping in the nc-Si, while capacitance reduction is explained by an equivalent circuit in terms of the change of the nc-Si capacitance as a result of the charge trapping. © 2004 The Electrochemical Society. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/42494
ISSN
2014 Impact Factor: 2.321
2015 SCImago Journal Rankings: 0.842
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorNg, CYen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorLi, Sen_HK
dc.contributor.authorZhao, Pen_HK
dc.date.accessioned2007-01-29T08:51:07Z-
dc.date.available2007-01-29T08:51:07Z-
dc.date.issued2004en_HK
dc.identifier.citationElectrochemical And Solid-State Letters, 2004, v. 7 n. 7, p. G134-G137en_HK
dc.identifier.issn1099-0062en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42494-
dc.description.abstractWe report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current-voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as- fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si tunneling paths due to charge trapping in the nc-Si, while capacitance reduction is explained by an equivalent circuit in terms of the change of the nc-Si capacitance as a result of the charge trapping. © 2004 The Electrochemical Society. All rights reserved.en_HK
dc.format.extent405075 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://scitation.aip.org/ESL/en_HK
dc.relation.ispartofElectrochemical and Solid-State Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsReproduced with permission from Electrochemical and Solid-State Letters, 2004, v. 7, p. G134-G137 Copyright 2004, The Electrochemical Society. Permission is not needed if figures and/or tables from one ECS publication will be reused in another forthcoming ECS publicationen_HK
dc.subjectChemistry engineeringen_HK
dc.subjectChemical engineeringen_HK
dc.titleCharging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1099-0062&volume=7&spage=G134&epage=G137&date=2004&atitle=Charging+effect+on+electrical+characteristics+of+MOS+structures+with+Si+nanocrystal+distribution+in+gate+oxideen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1149/1.1736593en_HK
dc.identifier.scopuseid_2-s2.0-3042710768en_HK
dc.identifier.hkuros88907-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3042710768&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume7en_HK
dc.identifier.issue7en_HK
dc.identifier.spageG134en_HK
dc.identifier.epageG137en_HK
dc.identifier.isiWOS:000221887600019-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridNg, CY=8604409400en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLiu, YC=36062391300en_HK
dc.identifier.scopusauthoridLi, S=8551715200en_HK
dc.identifier.scopusauthoridZhao, P=8521897200en_HK

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