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Article: Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

TitleBeryllium implantation induced deep level defects in p-type 6h-silicon carbide
Authors
KeywordsPhysics engineering
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2003, v. 93 n. 5, p. 3117-3119 How to Cite?
AbstractBeryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.
Persistent Identifierhttp://hdl.handle.net/10722/42212
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorHenkel, Ten_HK
dc.contributor.authorTanoue, Hen_HK
dc.contributor.authorKobayashi, Nen_HK
dc.date.accessioned2007-01-08T02:31:44Z-
dc.date.available2007-01-08T02:31:44Z-
dc.date.issued2003en_HK
dc.identifier.citationJournal Of Applied Physics, 2003, v. 93 n. 5, p. 3117-3119en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42212-
dc.description.abstractBeryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.en_HK
dc.format.extent52841 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleBeryllium implantation induced deep level defects in p-type 6h-silicon carbideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=93&issue=5&spage=3117&epage=3119&date=2003&atitle=Beryllium+implantation+induced+deep+level+defects+in+p-type+6H–silicon+carbideen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1542687en_HK
dc.identifier.scopuseid_2-s2.0-0037351560en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037351560&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume93en_HK
dc.identifier.issue5en_HK
dc.identifier.spage3117en_HK
dc.identifier.epage3119en_HK
dc.identifier.isiWOS:000181307000128-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridHenkel, T=7007164479en_HK
dc.identifier.scopusauthoridTanoue, H=7006255463en_HK
dc.identifier.scopusauthoridKobayashi, N=7404311470en_HK

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