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Conference Paper: Deep level defects in he-implanted n-6H-SiC studied by deep level transient spectroscopy

TitleDeep level defects in he-implanted n-6H-SiC studied by deep level transient spectroscopy
Authors
KeywordsPhysics engineering chemistry
Issue Date2004
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 2004, v. 815, p. 163-168 How to Cite?
AbstractDeep level transient spectroscopy (DLTS) was used to study deep level defects in He-implanted n-type 6H-SiC samples. Low dose He-implantation (fluence ∼2×1011 ions/cm2) has been employed to keep the as-implanted sample conductive so that studying the introduction and the thermal evolution of the defects becomes feasible. A strong broad DLTS peak at 275K-375K (called signal B) and another deep level at EC-0.50eV were observed in the as-implanted sample. The intensity of the peak B was observed to linearly proportional to the logarithm of the filling pulse width, which is a signature for electron capture into a defect related to dislocation. After annealing at 500°C, the intensity of peak was significantly reduced and the remained signal has properties identical to the well known Z 1/Z2 deep defects, although it is uncertain whether the Z1/Z2 exist in the as-implanted sample or it is the annealing product of the dislocation-related defect. The E1/E 2 defect (EC-0.3/0.4eV) was not presence in the as-implanted sample, but was observed after the 300°C annealing.
Persistent Identifierhttp://hdl.handle.net/10722/42495
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorChen, XDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2007-01-29T08:51:08Z-
dc.date.available2007-01-29T08:51:08Z-
dc.date.issued2004en_HK
dc.identifier.citationMaterials Research Society Symposium Proceedings, 2004, v. 815, p. 163-168en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42495-
dc.description.abstractDeep level transient spectroscopy (DLTS) was used to study deep level defects in He-implanted n-type 6H-SiC samples. Low dose He-implantation (fluence ∼2×1011 ions/cm2) has been employed to keep the as-implanted sample conductive so that studying the introduction and the thermal evolution of the defects becomes feasible. A strong broad DLTS peak at 275K-375K (called signal B) and another deep level at EC-0.50eV were observed in the as-implanted sample. The intensity of the peak B was observed to linearly proportional to the logarithm of the filling pulse width, which is a signature for electron capture into a defect related to dislocation. After annealing at 500°C, the intensity of peak was significantly reduced and the remained signal has properties identical to the well known Z 1/Z2 deep defects, although it is uncertain whether the Z1/Z2 exist in the as-implanted sample or it is the annealing product of the dislocation-related defect. The E1/E 2 defect (EC-0.3/0.4eV) was not presence in the as-implanted sample, but was observed after the 300°C annealing.en_HK
dc.format.extent1562641 bytes-
dc.format.extent37376 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleDeep level defects in he-implanted n-6H-SiC studied by deep level transient spectroscopyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=815&spage=163&epage=168&date=2004&atitle=Deep+level+defects+in+He-implanted+n-6H-SiC+studied+by+deep+level+transient+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-12844267611en_HK
dc.identifier.hkuros88915-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-12844267611&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume815en_HK
dc.identifier.spage163en_HK
dc.identifier.epage168en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK

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