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Article: Formation of P In defect in annealed liquid-encapsulated Czochralski InP

TitleFormation of P In defect in annealed liquid-encapsulated Czochralski InP
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 72 n. 17, p. 2126-2128 How to Cite?
AbstractFourier transform infrared spectroscopy measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP wafers, which reproducibly become semi-insulating upon annealing in an ambient of phosphorus at 800-900°C. The measurements reveal a high concentration of hydrogen complexes in the form V InH 4 existing in the material before annealing in agreement with recent experimental studies. It is argued that the dominant and essential process producing the semi-insulating behavior is the compensation produced by an EL 2-like deep donor phosphorus antisite defect, which is formed by the dissociation of the hydrogen complexes during the process of annealing. The deep donor compensates acceptors, the majority of which are shallow residual acceptor impurities and deep hydrogen associated V In and isolated V In levels, produced at the first stage of the dissociation of the V InH 4 complex. The high concentration of indium vacancies produced by the dissociation are the precursor of the EL 2-like phosphorus antisite. These results show the importance of hydrogen on the electrical properties of InP and indicate that this largely results from low formation energy of the complex V InH 4 in comparison with that of an isolated V In. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42180
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorXu, XLen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorLiu, SLen_HK
dc.contributor.authorYang, GYen_HK
dc.contributor.authorGuo, XBen_HK
dc.contributor.authorSun, YZen_HK
dc.contributor.authorWang, Len_HK
dc.contributor.authorZheng, QYen_HK
dc.contributor.authorZhou, ZHen_HK
dc.contributor.authorChen, Jen_HK
dc.date.accessioned2007-01-08T02:31:08Z-
dc.date.available2007-01-08T02:31:08Z-
dc.date.issued1998en_HK
dc.identifier.citationApplied Physics Letters, 1998, v. 72 n. 17, p. 2126-2128en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42180-
dc.description.abstractFourier transform infrared spectroscopy measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP wafers, which reproducibly become semi-insulating upon annealing in an ambient of phosphorus at 800-900°C. The measurements reveal a high concentration of hydrogen complexes in the form V InH 4 existing in the material before annealing in agreement with recent experimental studies. It is argued that the dominant and essential process producing the semi-insulating behavior is the compensation produced by an EL 2-like deep donor phosphorus antisite defect, which is formed by the dissociation of the hydrogen complexes during the process of annealing. The deep donor compensates acceptors, the majority of which are shallow residual acceptor impurities and deep hydrogen associated V In and isolated V In levels, produced at the first stage of the dissociation of the V InH 4 complex. The high concentration of indium vacancies produced by the dissociation are the precursor of the EL 2-like phosphorus antisite. These results show the importance of hydrogen on the electrical properties of InP and indicate that this largely results from low formation energy of the complex V InH 4 in comparison with that of an isolated V In. © 1998 American Institute of Physics.en_HK
dc.format.extent60713 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleFormation of P In defect in annealed liquid-encapsulated Czochralski InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=72&issue=17&spage=2126&epage=2128&date=1998&atitle=Formation+of+PIn+defect+in+annealed+liquid-encapsulated+Czochralski+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.121297en_HK
dc.identifier.scopuseid_2-s2.0-0001226567en_HK
dc.identifier.hkuros31280-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001226567&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume72en_HK
dc.identifier.issue17en_HK
dc.identifier.spage2126en_HK
dc.identifier.epage2128en_HK
dc.identifier.isiWOS:000073256700020-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhao, YW=55231671700en_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridLiu, SL=37102452500en_HK
dc.identifier.scopusauthoridYang, GY=8693019600en_HK
dc.identifier.scopusauthoridGuo, XB=36725899100en_HK
dc.identifier.scopusauthoridSun, YZ=7406433657en_HK
dc.identifier.scopusauthoridWang, L=13404833800en_HK
dc.identifier.scopusauthoridZheng, QY=36887875600en_HK
dc.identifier.scopusauthoridZhou, ZH=8423770000en_HK
dc.identifier.scopusauthoridChen, J=35225742400en_HK

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