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Article: The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

TitleThe depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2004, v. 96 n. 2, p. 1120-1126 How to Cite?
AbstractThe carrier concentration and scattering mechanism in undoped GaN film grown on sapphire were investigated. The film was grown on sapphire using metal organic chemical vapor deposition (MOCVD). Confocal micro-Raman spectroscopic measurements and temperature-dependant Hall (TDH) measurements were performed for the study of the depth distribution of the carrier density across the GaN film. The existence of a nonuniform spatial distribution of free carriers in the film with a highly conductive layer of ∼1 μm thickness near the GaN sapphire boundary was confirmed from the study. The electron mobility limiting effect of nitrogen vacancies on GaN bulk film was also discussed.
Persistent Identifierhttp://hdl.handle.net/10722/42225
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, Yen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorWei, ZFen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorZhi, CYen_HK
dc.date.accessioned2007-01-08T02:31:58Z-
dc.date.available2007-01-08T02:31:58Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Applied Physics, 2004, v. 96 n. 2, p. 1120-1126en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42225-
dc.description.abstractThe carrier concentration and scattering mechanism in undoped GaN film grown on sapphire were investigated. The film was grown on sapphire using metal organic chemical vapor deposition (MOCVD). Confocal micro-Raman spectroscopic measurements and temperature-dependant Hall (TDH) measurements were performed for the study of the depth distribution of the carrier density across the GaN film. The existence of a nonuniform spatial distribution of free carriers in the film with a highly conductive layer of ∼1 μm thickness near the GaN sapphire boundary was confirmed from the study. The electron mobility limiting effect of nitrogen vacancies on GaN bulk film was also discussed.en_HK
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dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleThe depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphireen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=96&issue=2&spage=1120&epage=1126&date=2004&atitle=The+depth-profiled+carrier+concentration+and+scattering+mechanism+in+undoped+GaN+film+grown+on+sapphireen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1763235en_HK
dc.identifier.scopuseid_2-s2.0-3242705262en_HK
dc.identifier.hkuros91986-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3242705262&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume96en_HK
dc.identifier.issue2en_HK
dc.identifier.spage1120en_HK
dc.identifier.epage1126en_HK
dc.identifier.isiWOS:000222391500028-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHuang, Y=26643004400en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridWei, ZF=7402259042en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridZhi, CY=36840038600en_HK

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