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	Title	Author(s)	Issue Date
	Formation of interface states and defects in GaAsSingle Bond signAl xGa1-xAs DH lasers under room-temperature cw operation Journal:Journal of Applied Physics	Yang, ES	1974
	Physical mechanisms of carrier leakage in DH injection lasers Journal:Journal of Applied Physics	Wu, CM Yang, ES	1978
	Current suppression induced by conduction-band discontinuity in Al 0.35Ga0.65As-GaAs N-p heterojunction diodes Journal:Journal of Applied Physics	Wu, CM Yang, ES	1980
	Recrystallized Al-nSi Schottky barriers with a barrier height of 0.93 eV Journal:Journal of Applied Physics	Wu, CMM Yang, ES	1980
	Thermal release of trapped electrons and phosphorescent decay in zinc silicate phosphors Journal:Journal of Applied Physics	Yang, ES Brownlow, JM	1981
	Investigation of high-temperature annealing and quenching effects on Al-nSi diodes by C-V and I-V measurements Journal:Journal of Applied Physics	Wu, CM Yang, ES	1981
	Dependence of electrical characteristics on laser power in cw laser processed Al-nSi diodes Journal:Journal of Applied Physics	Wu, CM Yang, ES Sedgwick, TO Hodgson, RT	1981
	Cognitive processing in Chinese literate and illiterate subjects: An fMRI study Journal:Human Brain Mapping	Li, G Cheung, RTF Gao, JH Lee, TMC Tan, LH Fox, PT Jack Jr, CR Yang, ES	2006
	Thin germanium nitride films grown by thermal reaction process Journal:Journal of Applied Physics	Hua, Q Rosenberg, J Ye, J Yang, ES	1982
	Metal-amorphous silicon-silicon tunnel rectifier Journal:Applied Physics Letters	Yang, ES Hua, QH Yang, DK Yang, GS Ho, PS	1984
	High gain and wide dynamic range punchthrough heterojunction phototransistors Journal:Journal of Applied Physics	Wang, Y Yang, ES Wang, WI	1993
	Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma Journal:Applied Physics Letters	Li, PW Liou, HK Yang, ES Iyer, SS Smith Iii, TP Lu, Z	1992
	Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes Journal:Journal of Applied Physics	Yang, ES Wu, CM Hung, RY	1980
	AlGaAs/GaAs heterojunction bipolar transistor with a two-dimensional electron gas emitter Journal:Applied Physics Letters	Wang, Q Wang, Y Longenbach, KF Yang, ES Wang, WI	1991
	Physical basis of scattering potential at grain boundary of polycrystalline semiconductors Journal:Applied Physics Letters	Wu, CM Yang, ES	1982
	Carrier confinement photoconductive detector Journal:Applied Physics Letters	Jalali, B Evans, HL Yang, ES	1988
	Interface capacitance in metal-semiconductor junctions Journal:Journal of Applied Physics	Wu, X Yang, ES	1989
	Characterization of polycrystalline silicon contacts by photoconductance measurements Journal:Journal of Applied Physics	Jalali, B Yang, ES Mei, P	1990
	A study of the photovoltaic effect of a semiconductor grain boundary by a scanning laser beam Journal:Journal of Applied Physics	Song, JS Yang, ES	1985
	Rapid thermal annealing of YBaCuO thin films deposited on SiO2 substrates Journal:Journal of Applied Physics	Ma, QY Yang, ES Chang, CA	1989
	Electrical and structural properties of shallow p + junctions formed by dual (Ga/B) ion implantation Journal:Applied Physics Letters	Mei, P Jalali, B Yang, ES Stoffel, NG Hart, DL	1990
	Measurement of interface states in palladium silicon diodes Journal:Journal of Applied Physics	Evans, HL Wu, X Yang, ES Ho, PS	1986
	Peaked schottky-barrier solar cells by Al-Si metallurgical reactions Journal:Applied Physics Letters	Card, HC Yang, ES Panayotatos, P	1977
	A low-temperature fabrication process of polycrystalline silicon-silicon p+-n junction diode Journal:Applied Physics Letters	Wu, CMM Yang, ES	1981
	Determination of grain boundary barrier height and interface states by a focused laser beam Journal:Applied Physics Letters	Poon, E Yang, ES Evans, HL Hwang, W Osgood Jr, RM	1983