File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Characterization of polycrystalline silicon contacts by photoconductance measurements

TitleCharacterization of polycrystalline silicon contacts by photoconductance measurements
Authors
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1990, v. 67 n. 4, p. 1953-1956 How to Cite?
AbstractThe confinement of minority carriers by polycrystalline silicon (polysilicon) contacts has been studied using the photoconductivity technique. Steady-state and transient optical measurements show a dramatic increase of stored carriers by these contacts. From a thermionic-diffusion model, a barrier height of 130 meV for the polysilicon/silicon contact has been extracted.
Persistent Identifierhttp://hdl.handle.net/10722/155412
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJalali, Ben_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorMei, Pen_US
dc.date.accessioned2012-08-08T08:33:21Z-
dc.date.available2012-08-08T08:33:21Z-
dc.date.issued1990en_US
dc.identifier.citationJournal Of Applied Physics, 1990, v. 67 n. 4, p. 1953-1956en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155412-
dc.description.abstractThe confinement of minority carriers by polycrystalline silicon (polysilicon) contacts has been studied using the photoconductivity technique. Steady-state and transient optical measurements show a dramatic increase of stored carriers by these contacts. From a thermionic-diffusion model, a barrier height of 130 meV for the polysilicon/silicon contact has been extracted.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleCharacterization of polycrystalline silicon contacts by photoconductance measurementsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.345573en_US
dc.identifier.scopuseid_2-s2.0-36549099762en_US
dc.identifier.volume67en_US
dc.identifier.issue4en_US
dc.identifier.spage1953en_US
dc.identifier.epage1956en_US
dc.identifier.isiWOS:A1990CP96100051-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridJalali, B=7004889917en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridMei, P=36876516400en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats