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Article: Physical mechanisms of carrier leakage in DH injection lasers

TitlePhysical mechanisms of carrier leakage in DH injection lasers
Authors
Issue Date1978
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1978, v. 49 n. 6, p. 3114-3117 How to Cite?
AbstractThe physical mechanisms of the breakdown of carrier confinement are considered using both the thermionic-emission and diffusion models. It is shown that, for most practical AlGaAs/GaAs DH lasers, the diffusion current is responsible for carrier leakage. The thermionic emission of minority carriers is important when the confinement barrier or the mobility is very large. The theory presented here is also applicable to structures other than the AlGaAs/GaAs laser.
Persistent Identifierhttp://hdl.handle.net/10722/154795
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:42Z-
dc.date.available2012-08-08T08:30:42Z-
dc.date.issued1978en_US
dc.identifier.citationJournal Of Applied Physics, 1978, v. 49 n. 6, p. 3114-3117en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154795-
dc.description.abstractThe physical mechanisms of the breakdown of carrier confinement are considered using both the thermionic-emission and diffusion models. It is shown that, for most practical AlGaAs/GaAs DH lasers, the diffusion current is responsible for carrier leakage. The thermionic emission of minority carriers is important when the confinement barrier or the mobility is very large. The theory presented here is also applicable to structures other than the AlGaAs/GaAs laser.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titlePhysical mechanisms of carrier leakage in DH injection lasersen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.325302en_US
dc.identifier.scopuseid_2-s2.0-0017981676en_US
dc.identifier.volume49en_US
dc.identifier.issue6en_US
dc.identifier.spage3114en_US
dc.identifier.epage3117en_US
dc.identifier.isiWOS:A1978FB40900017-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CM=7501663643en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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