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Article: A study of the photovoltaic effect of a semiconductor grain boundary by a scanning laser beam

TitleA study of the photovoltaic effect of a semiconductor grain boundary by a scanning laser beam
Authors
Song, JSYang, ES
Issue Date1985
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1985, v. 58 n. 8, p. 3129-3132 How to Cite?
DOI: http://dx.doi.org/10.1063/1.335816
AbstractExperimental observation of the photovoltaic effect of a semiconductor grain boundary with a scanning laser spot is analyzed assuming a single trap energy level. The current is calculated from the recombination velocity and the concentration of the minority carriers at the grain boundary which was derived from the continuity equation. The open-circuit voltage across the sample is obtained from equating this recombination current to the compensating current using the thermionic emission model. Using the recombination velocity and the diffusion length as variables, the calculated open-circuit voltage is compared with the experimental data.
Persistent Identifierhttp://hdl.handle.net/10722/155414
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1985ASA7300047

 

DC FieldValueLanguage
dc.contributor.authorSong, JSen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:22Z-
dc.date.available2012-08-08T08:33:22Z-
dc.date.issued1985en_US
dc.identifier.citationJournal of Applied Physics, 1985, v. 58 n. 8, p. 3129-3132-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155414-
dc.description.abstractExperimental observation of the photovoltaic effect of a semiconductor grain boundary with a scanning laser spot is analyzed assuming a single trap energy level. The current is calculated from the recombination velocity and the concentration of the minority carriers at the grain boundary which was derived from the continuity equation. The open-circuit voltage across the sample is obtained from equating this recombination current to the compensating current using the thermionic emission model. Using the recombination velocity and the diffusion length as variables, the calculated open-circuit voltage is compared with the experimental data.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleA study of the photovoltaic effect of a semiconductor grain boundary by a scanning laser beamen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.335816en_US
dc.identifier.scopuseid_2-s2.0-36549100598en_US
dc.identifier.volume58en_US
dc.identifier.issue8en_US
dc.identifier.spage3129en_US
dc.identifier.epage3132en_US
dc.identifier.isiWOS:A1985ASA7300047-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridSong, JS=36347667800en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0021-8979-

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