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Article: AlGaAs/GaAs heterojunction bipolar transistor with a two-dimensional electron gas emitter

TitleAlGaAs/GaAs heterojunction bipolar transistor with a two-dimensional electron gas emitter
Authors
Issue Date1991
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1991, v. 59 n. 20, p. 2582-2584 How to Cite?
AbstractWe report the operation of the first two-dimensional electron gas (2-DEG) emitter heterojunction bipolar transistor. This device, which was grown by molecular beam epitaxy, incorporates an undoped GaAs spacer between the emitter and base of a standard AlGaAs/GaAs single-heterojunction bipolar transistor. The introduction of the spacer layer causes the formation of a 2-DEG at the AlGaAs/GaAs interface. This 2-DEG defines the emitter side of the junction and produces an emitter-base characteristic similar to that of the collector GaAs homojunction. Using a 300 Å GaAs spacer, offset voltages as low as 30 mV have been attained. These devices also exhibit current gains greater than 10 at emitter current densities of 3 A/cm2 and gains up to 400 in the high current density regime.
Persistent Identifierhttp://hdl.handle.net/10722/155400
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Qen_US
dc.contributor.authorWang, Yen_US
dc.contributor.authorLongenbach, KFen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorWang, WIen_US
dc.date.accessioned2012-08-08T08:33:18Z-
dc.date.available2012-08-08T08:33:18Z-
dc.date.issued1991en_US
dc.identifier.citationApplied Physics Letters, 1991, v. 59 n. 20, p. 2582-2584en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155400-
dc.description.abstractWe report the operation of the first two-dimensional electron gas (2-DEG) emitter heterojunction bipolar transistor. This device, which was grown by molecular beam epitaxy, incorporates an undoped GaAs spacer between the emitter and base of a standard AlGaAs/GaAs single-heterojunction bipolar transistor. The introduction of the spacer layer causes the formation of a 2-DEG at the AlGaAs/GaAs interface. This 2-DEG defines the emitter side of the junction and produces an emitter-base characteristic similar to that of the collector GaAs homojunction. Using a 300 Å GaAs spacer, offset voltages as low as 30 mV have been attained. These devices also exhibit current gains greater than 10 at emitter current densities of 3 A/cm2 and gains up to 400 in the high current density regime.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleAlGaAs/GaAs heterojunction bipolar transistor with a two-dimensional electron gas emitteren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.105909en_US
dc.identifier.scopuseid_2-s2.0-3643109181en_US
dc.identifier.volume59en_US
dc.identifier.issue20en_US
dc.identifier.spage2582en_US
dc.identifier.epage2584en_US
dc.identifier.isiWOS:A1991GP27500035-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, Q=7406911671en_US
dc.identifier.scopusauthoridWang, Y=7601501822en_US
dc.identifier.scopusauthoridLongenbach, KF=6603287889en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridWang, WI=7501757397en_US

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