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Article: Formation of interface states and defects in GaAsSingle Bond signAl xGa1-xAs DH lasers under room-temperature cw operation

TitleFormation of interface states and defects in GaAsSingle Bond signAl xGa1-xAs DH lasers under room-temperature cw operation
Authors
Issue Date1974
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1974, v. 45 n. 9, p. 3801-3805 How to Cite?
AbstractExperimental results of an investigation on the nature of degradation-induced defects in AlxGa1-xAsSingle Bond signGaAs double-heterostructure injection lasers are presented. The variation of junction capacitance data before and after aging indicates that defects are generated initially at the p-n heterojunction interface and later spread into the active layer as traps. The density of interface states is calculated to be on the order of 1012 cm-2 and the density of traps in the active layer is calculated to be greater than 1017 cm-3. In addition, the carrier lifetime is measured by using both the delay-time and voltage-decay methods. After degradation, the carrier lifetime reduces slightly at the appearance of interface states but shows significant changes when traps are detected in the active layer. An explanation is given and correlated with the threshold-current variation. © 1974 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/154786
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:39Z-
dc.date.available2012-08-08T08:30:39Z-
dc.date.issued1974en_US
dc.identifier.citationJournal Of Applied Physics, 1974, v. 45 n. 9, p. 3801-3805en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154786-
dc.description.abstractExperimental results of an investigation on the nature of degradation-induced defects in AlxGa1-xAsSingle Bond signGaAs double-heterostructure injection lasers are presented. The variation of junction capacitance data before and after aging indicates that defects are generated initially at the p-n heterojunction interface and later spread into the active layer as traps. The density of interface states is calculated to be on the order of 1012 cm-2 and the density of traps in the active layer is calculated to be greater than 1017 cm-3. In addition, the carrier lifetime is measured by using both the delay-time and voltage-decay methods. After degradation, the carrier lifetime reduces slightly at the appearance of interface states but shows significant changes when traps are detected in the active layer. An explanation is given and correlated with the threshold-current variation. © 1974 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleFormation of interface states and defects in GaAsSingle Bond signAl xGa1-xAs DH lasers under room-temperature cw operationen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1663863en_US
dc.identifier.scopuseid_2-s2.0-0016102587en_US
dc.identifier.volume45en_US
dc.identifier.issue9en_US
dc.identifier.spage3801en_US
dc.identifier.epage3805en_US
dc.identifier.isiWOS:A1974U169500019-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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