File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Investigation of high-temperature annealing and quenching effects on Al-nSi diodes by C-V and I-V measurements

TitleInvestigation of high-temperature annealing and quenching effects on Al-nSi diodes by C-V and I-V measurements
Authors
Issue Date1981
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1981, v. 52 n. 7, p. 4700-4703 How to Cite?
AbstractThe behavior of Al-nSi diodes heat treatment above the eutectic temperature (600 °C) is studied by varying the annealing time and cooling rate. We have used the capacitance-voltage characteristic as a measure of the influence of the doping density and thickness of the recrystallized silicon layer at the interface. Poisson's equation is solved to obtain the C-V characteristic and to relate it to the effective barrier height. We find that the barrier height is independent of the annealing time, but it is a function of the cooling rate. It appears that the diffusion of aluminum into silicon does not play a significant role, but fast quenching tends to prevent aluminum from precipitation, so that the recrystallized silicon layer is highly doped.
Persistent Identifierhttp://hdl.handle.net/10722/154809
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:45Z-
dc.date.available2012-08-08T08:30:45Z-
dc.date.issued1981en_US
dc.identifier.citationJournal Of Applied Physics, 1981, v. 52 n. 7, p. 4700-4703en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154809-
dc.description.abstractThe behavior of Al-nSi diodes heat treatment above the eutectic temperature (600 °C) is studied by varying the annealing time and cooling rate. We have used the capacitance-voltage characteristic as a measure of the influence of the doping density and thickness of the recrystallized silicon layer at the interface. Poisson's equation is solved to obtain the C-V characteristic and to relate it to the effective barrier height. We find that the barrier height is independent of the annealing time, but it is a function of the cooling rate. It appears that the diffusion of aluminum into silicon does not play a significant role, but fast quenching tends to prevent aluminum from precipitation, so that the recrystallized silicon layer is highly doped.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleInvestigation of high-temperature annealing and quenching effects on Al-nSi diodes by C-V and I-V measurementsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.329301en_US
dc.identifier.scopuseid_2-s2.0-0019590028en_US
dc.identifier.volume52en_US
dc.identifier.issue7en_US
dc.identifier.spage4700en_US
dc.identifier.epage4703en_US
dc.identifier.isiWOS:A1981MC30900055-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats