File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Interface capacitance in metal-semiconductor junctions

TitleInterface capacitance in metal-semiconductor junctions
Authors
Issue Date1989
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1989, v. 65 n. 9, p. 3560-3567 How to Cite?
AbstractA new theory of the interface capacitance at metal-semiconductor junctions is presented. The diode capacitance is attributed to the modulation of the effective Schottky barrier height by interface charge. Relations between the measured capacitance and the physical properties of the interface states are formulated by using Shockley-Read statistics and taking into account the electron relaxation-time dispersion. This theory is applied to NiSi 2-nSi diodes with both epitaxial and nonepitaxial interfaces. Spectra of density distribution, as well as other interface parameters, are obtained, indicating that interface states in these diodes are most probably defect related.
Persistent Identifierhttp://hdl.handle.net/10722/155411
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:21Z-
dc.date.available2012-08-08T08:33:21Z-
dc.date.issued1989en_US
dc.identifier.citationJournal Of Applied Physics, 1989, v. 65 n. 9, p. 3560-3567en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155411-
dc.description.abstractA new theory of the interface capacitance at metal-semiconductor junctions is presented. The diode capacitance is attributed to the modulation of the effective Schottky barrier height by interface charge. Relations between the measured capacitance and the physical properties of the interface states are formulated by using Shockley-Read statistics and taking into account the electron relaxation-time dispersion. This theory is applied to NiSi 2-nSi diodes with both epitaxial and nonepitaxial interfaces. Spectra of density distribution, as well as other interface parameters, are obtained, indicating that interface states in these diodes are most probably defect related.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleInterface capacitance in metal-semiconductor junctionsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.342631en_US
dc.identifier.scopuseid_2-s2.0-36549095667en_US
dc.identifier.volume65en_US
dc.identifier.issue9en_US
dc.identifier.spage3560en_US
dc.identifier.epage3567en_US
dc.identifier.isiWOS:A1989U244800042-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats