File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Thin germanium nitride films grown by thermal reaction process

TitleThin germanium nitride films grown by thermal reaction process
Authors
Issue Date1982
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1982, v. 53 n. 12, p. 8969-8973 How to Cite?
AbstractThin films have been grown on 〈111〉 germanium by thermal nitridation. The surface morphology, composition, thickness, and refractive index of the films have been investigated. Compositional analysis was performed by electron beam x-ray microanalysis which indicates that the films contain oxygen as well as nitrogen and have a nitrogen to oxygen ratio on the order of 2.5:1. Film thickness and refractive index were determined by ellipsometry. The thicknesses ranged from 60 to 150 Å, and the refractive indices ranged from 1.5 to 2.3 depending on growth parameters. A universal chart for evaluating the thickness and refractive index of dielectric films on germanium from the ellipsometric parameters ψ and Δ is also presented.
Persistent Identifierhttp://hdl.handle.net/10722/154816
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHua, Qen_US
dc.contributor.authorRosenberg, Jen_US
dc.contributor.authorYe, Jen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:47Z-
dc.date.available2012-08-08T08:30:47Z-
dc.date.issued1982en_US
dc.identifier.citationJournal Of Applied Physics, 1982, v. 53 n. 12, p. 8969-8973en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154816-
dc.description.abstractThin films have been grown on 〈111〉 germanium by thermal nitridation. The surface morphology, composition, thickness, and refractive index of the films have been investigated. Compositional analysis was performed by electron beam x-ray microanalysis which indicates that the films contain oxygen as well as nitrogen and have a nitrogen to oxygen ratio on the order of 2.5:1. Film thickness and refractive index were determined by ellipsometry. The thicknesses ranged from 60 to 150 Å, and the refractive indices ranged from 1.5 to 2.3 depending on growth parameters. A universal chart for evaluating the thickness and refractive index of dielectric films on germanium from the ellipsometric parameters ψ and Δ is also presented.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleThin germanium nitride films grown by thermal reaction processen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.330453en_US
dc.identifier.scopuseid_2-s2.0-0020298352en_US
dc.identifier.volume53en_US
dc.identifier.issue12en_US
dc.identifier.spage8969en_US
dc.identifier.epage8973en_US
dc.identifier.isiWOS:A1982PU09500078-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHua, Q=7006230819en_US
dc.identifier.scopusauthoridRosenberg, J=7402322886en_US
dc.identifier.scopusauthoridYe, J=7403237531en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats