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Article: Current suppression induced by conduction-band discontinuity in Al 0.35Ga0.65As-GaAs N-p heterojunction diodes

TitleCurrent suppression induced by conduction-band discontinuity in Al 0.35Ga0.65As-GaAs N-p heterojunction diodes
Authors
Issue Date1980
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1980, v. 51 n. 4, p. 2261-2263 How to Cite?
AbstractCurent suppression in Al0.35Ga0.65As-GaAs N-p heterojunctions is observed experimentally. The data are explained by examining the carrier transport modified by electron accumulation in the interface potential notch resulting from the conduction-band discontinuity. In addition, it is found that the temperature dependent I-V measurements can be used to deduce the magnitude of ΔEC at the junction interface.
Persistent Identifierhttp://hdl.handle.net/10722/154801
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:43Z-
dc.date.available2012-08-08T08:30:43Z-
dc.date.issued1980en_US
dc.identifier.citationJournal Of Applied Physics, 1980, v. 51 n. 4, p. 2261-2263en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154801-
dc.description.abstractCurent suppression in Al0.35Ga0.65As-GaAs N-p heterojunctions is observed experimentally. The data are explained by examining the carrier transport modified by electron accumulation in the interface potential notch resulting from the conduction-band discontinuity. In addition, it is found that the temperature dependent I-V measurements can be used to deduce the magnitude of ΔEC at the junction interface.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleCurrent suppression induced by conduction-band discontinuity in Al 0.35Ga0.65As-GaAs N-p heterojunction diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.327853en_US
dc.identifier.scopuseid_2-s2.0-0019003317en_US
dc.identifier.volume51en_US
dc.identifier.issue4en_US
dc.identifier.spage2261en_US
dc.identifier.epage2263en_US
dc.identifier.isiWOS:A1980JS12000064-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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