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Article: Recrystallized Al-nSi Schottky barriers with a barrier height of 0.93 eV

TitleRecrystallized Al-nSi Schottky barriers with a barrier height of 0.93 eV
Authors
Issue Date1980
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1980, v. 51 n. 11, p. 5889-5892 How to Cite?
AbstractUsing a silicon-aluminum-silicon sandwich structure obtained by evaporating thin aluminum and silicon films on a single-crystal silicon substrate, we have fabricated Al-nSi Schottky barriers with a maximum barrier height of 0.93 eV. The formation of the rectifying contact and its dependence on the Al-film thickness were studied by means of I-V and C-V measurements. It is found that the as-deposited films form an Ohmic contact with a n/n+ silicon substrate. However, we have obtained rectification characteristics by heat treatment at 600 °C (slightly above the Al-Si eutectic temperature) in a nitrogen or hydrogen environment. The barrier height increases with aluminum thickness (l) from 0.79 eV for l=500 Å and it saturates at 0.93 eV for l≳1500 Å. The uppermost silicon film (300 Å) is needed to prevent the formation of aluminum clusters under heat treatment. In completed diodes the surface silicon film is recrystallized and large polycrystalline-Si grains are seen under an optical microscope.
Persistent Identifierhttp://hdl.handle.net/10722/154803
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, CMMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:44Z-
dc.date.available2012-08-08T08:30:44Z-
dc.date.issued1980en_US
dc.identifier.citationJournal Of Applied Physics, 1980, v. 51 n. 11, p. 5889-5892en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154803-
dc.description.abstractUsing a silicon-aluminum-silicon sandwich structure obtained by evaporating thin aluminum and silicon films on a single-crystal silicon substrate, we have fabricated Al-nSi Schottky barriers with a maximum barrier height of 0.93 eV. The formation of the rectifying contact and its dependence on the Al-film thickness were studied by means of I-V and C-V measurements. It is found that the as-deposited films form an Ohmic contact with a n/n+ silicon substrate. However, we have obtained rectification characteristics by heat treatment at 600 °C (slightly above the Al-Si eutectic temperature) in a nitrogen or hydrogen environment. The barrier height increases with aluminum thickness (l) from 0.79 eV for l=500 Å and it saturates at 0.93 eV for l≳1500 Å. The uppermost silicon film (300 Å) is needed to prevent the formation of aluminum clusters under heat treatment. In completed diodes the surface silicon film is recrystallized and large polycrystalline-Si grains are seen under an optical microscope.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleRecrystallized Al-nSi Schottky barriers with a barrier height of 0.93 eVen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.327553en_US
dc.identifier.scopuseid_2-s2.0-0019083810en_US
dc.identifier.volume51en_US
dc.identifier.issue11en_US
dc.identifier.spage5889en_US
dc.identifier.epage5892en_US
dc.identifier.isiWOS:A1980KX90100050-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CMM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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