File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Rapid thermal annealing of YBaCuO thin films deposited on SiO2 substrates

TitleRapid thermal annealing of YBaCuO thin films deposited on SiO2 substrates
Authors
Issue Date1989
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1989, v. 66 n. 4, p. 1866-1868 How to Cite?
AbstractAg/Cu/BaO/Y2O3/Ag layered structures have been formed using electron-beam evaporation on SiO2 substrates, and post-annealed by rapid thermal annealing at different temperatures. After a 960 °C 15-s anneal, the film showed a superconducting onset temperature of 93 K and a zero resistance at 79 K. With a lower-temperature anneal, the film exhibited metallic behavior. On the other hand, for a higher-temperature anneal, silicon was found to diffuse into the film as observed by Auger depth profiling. The Si out-diffusion degraded the superconducting properties of the film.
Persistent Identifierhttp://hdl.handle.net/10722/155415
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, QYen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorChang, CAen_US
dc.date.accessioned2012-08-08T08:33:22Z-
dc.date.available2012-08-08T08:33:22Z-
dc.date.issued1989en_US
dc.identifier.citationJournal Of Applied Physics, 1989, v. 66 n. 4, p. 1866-1868en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155415-
dc.description.abstractAg/Cu/BaO/Y2O3/Ag layered structures have been formed using electron-beam evaporation on SiO2 substrates, and post-annealed by rapid thermal annealing at different temperatures. After a 960 °C 15-s anneal, the film showed a superconducting onset temperature of 93 K and a zero resistance at 79 K. With a lower-temperature anneal, the film exhibited metallic behavior. On the other hand, for a higher-temperature anneal, silicon was found to diffuse into the film as observed by Auger depth profiling. The Si out-diffusion degraded the superconducting properties of the film.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleRapid thermal annealing of YBaCuO thin films deposited on SiO2 substratesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.344363en_US
dc.identifier.scopuseid_2-s2.0-36549102232en_US
dc.identifier.volume66en_US
dc.identifier.issue4en_US
dc.identifier.spage1866en_US
dc.identifier.epage1868en_US
dc.identifier.isiWOS:A1989AJ17600056-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, QY=7402815617en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridChang, CA=7407042938en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats