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Article: A low-temperature fabrication process of polycrystalline silicon-silicon p+-n junction diode

TitleA low-temperature fabrication process of polycrystalline silicon-silicon p+-n junction diode
Authors
Issue Date1981
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1981, v. 38 n. 10, p. 813-814 How to Cite?
AbstractA new method has been developed to form a p+-n polycrystalline-crystalline junction at low temperature. The technique involves the use of an e-beam evaporated polycrystalline silicon-aluminum-polycrystalline silicon multilayer structure to obtain an Al-rich polycrystalline film by heat treatment at 600°C. Experimenal evidence indicates that the current conduction is dominated by electron recombination at the interface between the polycrystalline silicon and the substrate. The best fit between a simple model and expeirmental data yields an effective recombination velocity of 5×104 cm/sec, a value consistent with carrier recombination at the grain boundaries of polycrystalline silicon.
Persistent Identifierhttp://hdl.handle.net/10722/155417
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, CMMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:22Z-
dc.date.available2012-08-08T08:33:22Z-
dc.date.issued1981en_US
dc.identifier.citationApplied Physics Letters, 1981, v. 38 n. 10, p. 813-814en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155417-
dc.description.abstractA new method has been developed to form a p+-n polycrystalline-crystalline junction at low temperature. The technique involves the use of an e-beam evaporated polycrystalline silicon-aluminum-polycrystalline silicon multilayer structure to obtain an Al-rich polycrystalline film by heat treatment at 600°C. Experimenal evidence indicates that the current conduction is dominated by electron recombination at the interface between the polycrystalline silicon and the substrate. The best fit between a simple model and expeirmental data yields an effective recombination velocity of 5×104 cm/sec, a value consistent with carrier recombination at the grain boundaries of polycrystalline silicon.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleA low-temperature fabrication process of polycrystalline silicon-silicon p+-n junction diodeen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.92141en_US
dc.identifier.scopuseid_2-s2.0-36749106948en_US
dc.identifier.volume38en_US
dc.identifier.issue10en_US
dc.identifier.spage813en_US
dc.identifier.epage814en_US
dc.identifier.isiWOS:A1981LR63700035-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CMM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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