File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: High gain and wide dynamic range punchthrough heterojunction phototransistors

TitleHigh gain and wide dynamic range punchthrough heterojunction phototransistors
Authors
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1993, v. 74 n. 11, p. 6978-6981 How to Cite?
AbstractIn this article, we propose and demonstrate a novel punchthrough heterojunction phototransistor (HPT). The base of the transistor is lightly doped and completely depleted under the operating condition. The collector bias current can be applied without the base terminal. The transistors exhibit optical conversion gain as high as 1240 at an incident optical power as low as 0.5 μW, and the gain changes less than 15% over a 20 dB range of incident optical power. The transient measurements showed that the transistor has a high response speed than that of conventional two or three terminal HPTs. This represents the best performance of HPTs with similar dimensions. The results of simulation showed that the punchthrough HPTs have much lower noise characteristics than conventional HPTs. The principle reported here can be applied to HPTs made from other material systems, such as AlGaSb/GaSb and InP/InGaAs, for long wavelength optical communications.
Persistent Identifierhttp://hdl.handle.net/10722/154993
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWang, Yen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorWang, WIen_US
dc.date.accessioned2012-08-08T08:31:26Z-
dc.date.available2012-08-08T08:31:26Z-
dc.date.issued1993en_US
dc.identifier.citationJournal Of Applied Physics, 1993, v. 74 n. 11, p. 6978-6981en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154993-
dc.description.abstractIn this article, we propose and demonstrate a novel punchthrough heterojunction phototransistor (HPT). The base of the transistor is lightly doped and completely depleted under the operating condition. The collector bias current can be applied without the base terminal. The transistors exhibit optical conversion gain as high as 1240 at an incident optical power as low as 0.5 μW, and the gain changes less than 15% over a 20 dB range of incident optical power. The transient measurements showed that the transistor has a high response speed than that of conventional two or three terminal HPTs. This represents the best performance of HPTs with similar dimensions. The results of simulation showed that the punchthrough HPTs have much lower noise characteristics than conventional HPTs. The principle reported here can be applied to HPTs made from other material systems, such as AlGaSb/GaSb and InP/InGaAs, for long wavelength optical communications.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleHigh gain and wide dynamic range punchthrough heterojunction phototransistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.355048en_US
dc.identifier.scopuseid_2-s2.0-0027904262en_US
dc.identifier.volume74en_US
dc.identifier.issue11en_US
dc.identifier.spage6978en_US
dc.identifier.epage6981en_US
dc.identifier.isiWOS:A1993MJ71200074-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, Y=7601501822en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridWang, WI=7501757397en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats