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Article: Metal-amorphous silicon-silicon tunnel rectifier

TitleMetal-amorphous silicon-silicon tunnel rectifier
Authors
Yang, ESHua, QHYang, DKYang, GSHo, PS
Issue Date1984
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1984, v. 44 n. 12, p. 1144-1146 How to Cite?
DOI: http://dx.doi.org/10.1063/1.94671
AbstractWe report a new metal-semiconductor thin-film diode with an I-V characteristic similar to that of a p-n junction. Its forward bias current is dominated by majority-carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I-V curves, and the Auger depth profile of the interfacial layer are presented.
Persistent Identifierhttp://hdl.handle.net/10722/154830
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:A1984SV90400017

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorHua, QHen_US
dc.contributor.authorYang, DKen_US
dc.contributor.authorYang, GSen_US
dc.contributor.authorHo, PSen_US
dc.date.accessioned2012-08-08T08:30:50Z-
dc.date.available2012-08-08T08:30:50Z-
dc.date.issued1984en_US
dc.identifier.citationApplied Physics Letters, 1984, v. 44 n. 12, p. 1144-1146-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/154830-
dc.description.abstractWe report a new metal-semiconductor thin-film diode with an I-V characteristic similar to that of a p-n junction. Its forward bias current is dominated by majority-carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I-V curves, and the Auger depth profile of the interfacial layer are presented.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleMetal-amorphous silicon-silicon tunnel rectifieren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.94671en_US
dc.identifier.scopuseid_2-s2.0-0021444528en_US
dc.identifier.volume44en_US
dc.identifier.issue12en_US
dc.identifier.spage1144en_US
dc.identifier.epage1146en_US
dc.identifier.isiWOS:A1984SV90400017-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridHua, QH=7006230819en_US
dc.identifier.scopusauthoridYang, DK=7404800737en_US
dc.identifier.scopusauthoridYang, GS=23023865100en_US
dc.identifier.scopusauthoridHo, PS=24351761400en_US
dc.identifier.issnl0003-6951-

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