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Article: Physical basis of scattering potential at grain boundary of polycrystalline semiconductors

TitlePhysical basis of scattering potential at grain boundary of polycrystalline semiconductors
Authors
Wu, CMYang, ES
Issue Date1982
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1982, v. 40 n. 1, p. 49-51 How to Cite?
DOI: http://dx.doi.org/10.1063/1.92914
AbstractA physical theory using a charge scattering model is proposed to interpret the experimental data of grain boundary transport in polycrystalline semiconductors. The calculated result explains the need of an attenuation factor as an added coefficient in the thermionic emission current.
Persistent Identifierhttp://hdl.handle.net/10722/155282
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1982MX23300020

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:42Z-
dc.date.available2012-08-08T08:32:42Z-
dc.date.issued1982en_US
dc.identifier.citationApplied Physics Letters, 1982, v. 40 n. 1, p. 49-51-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155282-
dc.description.abstractA physical theory using a charge scattering model is proposed to interpret the experimental data of grain boundary transport in polycrystalline semiconductors. The calculated result explains the need of an attenuation factor as an added coefficient in the thermionic emission current.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titlePhysical basis of scattering potential at grain boundary of polycrystalline semiconductorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.92914en_US
dc.identifier.scopuseid_2-s2.0-23644461733en_US
dc.identifier.volume40en_US
dc.identifier.issue1en_US
dc.identifier.spage49en_US
dc.identifier.epage51en_US
dc.identifier.isiWOS:A1982MX23300020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0003-6951-

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