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Article: Carrier confinement photoconductive detector

TitleCarrier confinement photoconductive detector
Authors
Issue Date1988
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1988, v. 52 n. 16, p. 1323-1325 How to Cite?
AbstractWe propose a new device, the carrier confinement photoconductive detector, in which an improvement in performance over a conventional photoconductor is achieved by confinement of photogenerated carriers in the active channel. The confinement can be realized by placing a layer of a wide band-gap semiconductor between the channel and ohmic contact. Analytical and numerical analyses show that gain-bandwidth improvement of 100% can be achieved by using the GaAl/AlGaAs system.
Persistent Identifierhttp://hdl.handle.net/10722/155413
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorJalali, Ben_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:33:21Z-
dc.date.available2012-08-08T08:33:21Z-
dc.date.issued1988en_US
dc.identifier.citationApplied Physics Letters, 1988, v. 52 n. 16, p. 1323-1325en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155413-
dc.description.abstractWe propose a new device, the carrier confinement photoconductive detector, in which an improvement in performance over a conventional photoconductor is achieved by confinement of photogenerated carriers in the active channel. The confinement can be realized by placing a layer of a wide band-gap semiconductor between the channel and ohmic contact. Analytical and numerical analyses show that gain-bandwidth improvement of 100% can be achieved by using the GaAl/AlGaAs system.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleCarrier confinement photoconductive detectoren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.99148en_US
dc.identifier.scopuseid_2-s2.0-36549100275en_US
dc.identifier.volume52en_US
dc.identifier.issue16en_US
dc.identifier.spage1323en_US
dc.identifier.epage1325en_US
dc.identifier.isiWOS:A1988M949800014-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridJalali, B=7004889917en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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