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Article: Electrical and structural properties of shallow p + junctions formed by dual (Ga/B) ion implantation

TitleElectrical and structural properties of shallow p + junctions formed by dual (Ga/B) ion implantation
Authors
Issue Date1990
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1990, v. 56 n. 14, p. 1362-1364 How to Cite?
AbstractUltrashallow p + junctions formed by dual implanation of Ga and B with low-temperature rapid thermal anneal (RTA) are reported. The electrical and structural properties of the shallow junction were studied by sheet resistance and diode reverse recovery measurements, Rutherford backscattering channeling, and secondary-ion mass spectrometry. A junction of 400 Å depth (full width at half maximum) and an average carrier concentration of 3×10 19 cm -3 were realized with RTA at 600°C. It is shown that there is excess damage in the dual-implanted junctions which affects the minority-carrier lifetime.
Persistent Identifierhttp://hdl.handle.net/10722/155409
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMei, Pen_US
dc.contributor.authorJalali, Ben_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorStoffel, NGen_US
dc.contributor.authorHart, DLen_US
dc.date.accessioned2012-08-08T08:33:20Z-
dc.date.available2012-08-08T08:33:20Z-
dc.date.issued1990en_US
dc.identifier.citationApplied Physics Letters, 1990, v. 56 n. 14, p. 1362-1364en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155409-
dc.description.abstractUltrashallow p + junctions formed by dual implanation of Ga and B with low-temperature rapid thermal anneal (RTA) are reported. The electrical and structural properties of the shallow junction were studied by sheet resistance and diode reverse recovery measurements, Rutherford backscattering channeling, and secondary-ion mass spectrometry. A junction of 400 Å depth (full width at half maximum) and an average carrier concentration of 3×10 19 cm -3 were realized with RTA at 600°C. It is shown that there is excess damage in the dual-implanted junctions which affects the minority-carrier lifetime.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleElectrical and structural properties of shallow p + junctions formed by dual (Ga/B) ion implantationen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.102515en_US
dc.identifier.scopuseid_2-s2.0-36549094597en_US
dc.identifier.volume56en_US
dc.identifier.issue14en_US
dc.identifier.spage1362en_US
dc.identifier.epage1364en_US
dc.identifier.isiWOS:A1990CW99500023-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMei, P=36876516400en_US
dc.identifier.scopusauthoridJalali, B=7004889917en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridStoffel, NG=7003317964en_US
dc.identifier.scopusauthoridHart, DL=22966813200en_US

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