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Article: Variation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes

TitleVariation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodes
Authors
Yang, ESWu, CMHung, RY
Issue Date1980
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1980, v. 51 n. 2, p. 1262-1264 How to Cite?
DOI: http://dx.doi.org/10.1063/1.327704
AbstractThe low-current I-V characteristics of Al xGa 1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.
Persistent Identifierhttp://hdl.handle.net/10722/155355
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:A1980JK65800079

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorWu, CMen_US
dc.contributor.authorHung, RYen_US
dc.date.accessioned2012-08-08T08:33:02Z-
dc.date.available2012-08-08T08:33:02Z-
dc.date.issued1980en_US
dc.identifier.citationJournal of Applied Physics, 1980, v. 51 n. 2, p. 1262-1264-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155355-
dc.description.abstractThe low-current I-V characteristics of Al xGa 1-xAs- GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic-field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleVariation of the ideality factor in the curent-voltage characteristics of double-heterostructure diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.327704en_US
dc.identifier.scopuseid_2-s2.0-33847712066en_US
dc.identifier.volume51en_US
dc.identifier.issue2en_US
dc.identifier.spage1262en_US
dc.identifier.epage1264en_US
dc.identifier.isiWOS:A1980JK65800079-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridWu, CM=7501663643en_US
dc.identifier.scopusauthoridHung, RY=7102804721en_US
dc.identifier.issnl0021-8979-

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