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Article: Measurement of interface states in palladium silicon diodes

TitleMeasurement of interface states in palladium silicon diodes
Authors
Evans, HLWu, XYang, ESHo, PS
Issue Date1986
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1986, v. 60 n. 10, p. 3611-3615 How to Cite?
DOI: http://dx.doi.org/10.1063/1.337567
AbstractIn this paper we present the results of a forward-biased capacitance measurement on palladium silicon Schottky diodes. The data are interpreted in terms of the interface state density by taking into account the effect of series resistance and using Shockley-Read-Hall statistics. Exchange of charge between the metal and the interface states is included in the model. For the as-deposited sample, an effective state is postulated to lie opposite the metal Fermi level with a concentration of 1×1012/cm 2. Upon annealing and formation of palladium silicide, the density of states decreases by a factor of 2 and changes occur in the capture and emission time constants.
Persistent Identifierhttp://hdl.handle.net/10722/155410
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1986E686100036

 

DC FieldValueLanguage
dc.contributor.authorEvans, HLen_US
dc.contributor.authorWu, Xen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorHo, PSen_US
dc.date.accessioned2012-08-08T08:33:21Z-
dc.date.available2012-08-08T08:33:21Z-
dc.date.issued1986en_US
dc.identifier.citationJournal of Applied Physics, 1986, v. 60 n. 10, p. 3611-3615-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155410-
dc.description.abstractIn this paper we present the results of a forward-biased capacitance measurement on palladium silicon Schottky diodes. The data are interpreted in terms of the interface state density by taking into account the effect of series resistance and using Shockley-Read-Hall statistics. Exchange of charge between the metal and the interface states is included in the model. For the as-deposited sample, an effective state is postulated to lie opposite the metal Fermi level with a concentration of 1×1012/cm 2. Upon annealing and formation of palladium silicide, the density of states decreases by a factor of 2 and changes occur in the capture and emission time constants.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleMeasurement of interface states in palladium silicon diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.337567en_US
dc.identifier.scopuseid_2-s2.0-36549094760en_US
dc.identifier.volume60en_US
dc.identifier.issue10en_US
dc.identifier.spage3611en_US
dc.identifier.epage3615en_US
dc.identifier.isiWOS:A1986E686100036-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridHo, PS=24351761400en_US
dc.identifier.issnl0021-8979-

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