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	Title	Author(s)	Issue Date
	Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling Journal:IEEE Transactions on Electron Devices	Markov, SN Kwok, YH Li, J Zhou, W Zhou, Y Chen, G	2019
	Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings	Amoroso, Salvatore Maria Gerrer, Louis Adamu-Lema, Fikru Markov, Stanislav Asenov, Asen	2013
	RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study Journal:Solid-State Electronics	Amoroso, Salvatore Maria Gerrer, Louis Markov, Stanislav Adamu-Lema, Fikru Asenov, Asen	2013
	A multi-scale modeling of junctionless field-effect transistors Journal:Applied Physics Letters	Yam, CY Peng, J Chen, Q Markov, SN Huang, J Wong, N Chew, WC Chen, G	2013
	Permittivity of oxidized ultra-thin silicon films from atomistic simulations Journal:IEEE Electron Device Letters	Markov, SN Penazzi, G Kwok, YH Aradi, B Pecchia, A Frauenheim, T Chen, G	2015
	Device Modelling from Atom to Transistor: including the gate oxide Proceeding/Conference:Australian Symposium on Computationally Enhanced Materials Design (ACEMD), 2016	Markov, SN	2016
	Device Modelling from Atoms to Transistor: including the gate oxide Proceeding/Conference:Annual Conference of The Physical Society of Hong Kong	Markov, SN	2016
	Enhanced Photovoltaic Properties Induced by Ferroelectric Domain Structures in Organometallic Halide Perovskites Journal:The Journal of Physical Chemistry C	Bi, FZ Markov, SN Wang, RL KWOK, YH ZHOU, W Liu, LM Zheng, X Chen, G Yam, CY	2017
	Towards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface Proceeding/Conference:International Conference on Simulation of Semiconductor Processes and Devices Proceedings	Markov, SN Aradi, B Yam, CY Chen, G Frauenheim, T	2014
	Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology Book:Silicon-On-Insulator (SOI) Technology: Manufacture and Applications	Markov, SN Cheng, B Zain, ASM Asenov, A	2014
	Statistical Study of Bias Temperature Instabilities by Means of 3D 'Atomistic' Simulation Book:Bias Temperature Instability for Devices and Circuits	Amoroso, SM Gerer, L Adamu-Lema, F Markov, SN Asenov, A	2013
	Density Functional Tight Binding for Atomistic Modelling of Field-effect Transistors Proceeding/Conference:International CECAM-Workshop: Approximate Quantum Methods in the ab initio World	Markov, SN	2016
	Paramameterization and Application of DFTB theory to the modelling of Fully Depleted Si-on-insulator MOSFETs Proceeding/Conference:International CECAM Workshop on Development of next generation accurate approximate DFT/B methods	Markov, SN	2015
	Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions Journal:IEEE Electron Device Letters	Markov, Stanislav Cheng, Binjie Asenov, Asen	2012
	3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices Proceeding/Conference:2012 15th International Workshop on Computational Electronics, IWCE 2012	Amoroso, Salvatore Maria Adamu-Lema, Fikru Markov, Stanislav Gerrer, Louis Asenov, Asen	2012
	Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs Journal:Microelectronics Reliability	Gerrer, L.Markov, S.Amoroso, S. M.Adamu-Lema, F.Asenov, A.	2012
	Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation Proceeding/Conference:European Solid-State Device Research Conference	Amoroso, Salvatore M.Gerrer, Louis Markov, Stanislav Adamu-Lema, Fikru Asenov, Asen	2012
	Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers	Markov, Stanislav Brown, Andrew R.Cheng, Binjie Roy, Gareth Roy, Scott Asenov, Asen	2007
	On the sub-nm EOT scaling of high-κ gate stacks Proceeding/Conference:ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon	Markov, S.Roy, S.Fiegna, C.Sangiorgi, E.Asenov, A.	2008
	Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer Proceeding/Conference:Physica Status Solidi (A) Applications and Materials Science	Markov, Stanislav Sushko, Peter V.Roy, Scott Fiegna, Claudio Sangiorgi, Enrico Shluger, Alexander L.Asenov, Asen	2008
	Analysis of silicon dioxide interface transition region in MOS structures Proceeding/Conference:2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007	Markov, S.Barin, N.Fiegna, C.Roy, S.Sangiorgi, E.Asenov, A.	2007
	Direct tunnelling gate leakage variability in Nano-CMOS transistors Journal:IEEE Transactions on Electron Devices	Markov, Stanislav Roy, Scott Asenov, Asen	2010
	Back-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX Journal:IEEE Transactions on Electron Devices	Yang, Yunxiang Markov, Stanislav Cheng, Binjie Zain, Anis Suhaila Mohd Liu, Xiaoyan Cheng, Asen	2013
	Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs Journal:IEEE Transactions on Electron Devices	Adamu-Lema, Fikru Compagnoni, Christian Monzio Amoroso, Salvatore M.Castellani, Niccolò Gerrer, Louis Markov, Stanislav Spinelli, Alessandro S.Lacaita, Andrea L.Asenov, Asen	2013
	Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG Proceeding/Conference:Proceedings - IEEE International SOI Conference	Markov, Stanislav Zain, Anis Suhaila Mohd Cheng, Binjie Asenov, Asen	2012