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Discovery - Top 10
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Results 1-25 of 43 (Search time: 0.009 seconds).
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Title
Author(s)
Issue Date
Fundamental Limit to Scaling Si Field-Effect Transistors Due to Source-to-Drain Direct Tunneling
Journal:
IEEE Transactions on Electron Devices
Markov, SN
Kwok, YH
Li, J
Zhou, W
Zhou, Y
Chen, G
2019
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories
Proceeding/Conference:
IEEE International Reliability Physics Symposium Proceedings
Amoroso, Salvatore Maria
Gerrer, Louis
Adamu-Lema, Fikru
Markov, Stanislav
Asenov, Asen
2013
RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
Journal:
Solid-State Electronics
Amoroso, Salvatore Maria
Gerrer, Louis
Markov, Stanislav
Adamu-Lema, Fikru
Asenov, Asen
2013
A multi-scale modeling of junctionless field-effect transistors
Journal:
Applied Physics Letters
Yam, CY
Peng, J
Chen, Q
Markov, SN
Huang, J
Wong, N
Chew, WC
Chen, G
2013
Permittivity of oxidized ultra-thin silicon films from atomistic simulations
Journal:
IEEE Electron Device Letters
Markov, SN
Penazzi, G
Kwok, YH
Aradi, B
Pecchia, A
Frauenheim, T
Chen, G
2015
Device Modelling from Atom to Transistor: including the gate oxide
Proceeding/Conference:
Australian Symposium on Computationally Enhanced Materials Design (ACEMD), 2016
Markov, SN
2016
Device Modelling from Atoms to Transistor: including the gate oxide
Proceeding/Conference:
Annual Conference of The Physical Society of Hong Kong
Markov, SN
2016
Enhanced Photovoltaic Properties Induced by Ferroelectric Domain Structures in Organometallic Halide Perovskites
Journal:
The Journal of Physical Chemistry C
Bi, FZ
Markov, SN
Wang, RL
KWOK, YH
ZHOU, W
Liu, LM
Zheng, X
Chen, G
Yam, CY
2017
Towards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface
Proceeding/Conference:
International Conference on Simulation of Semiconductor Processes and Devices Proceedings
Markov, SN
Aradi, B
Yam, CY
Chen, G
Frauenheim, T
2014
Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology
Book:
Silicon-On-Insulator (SOI) Technology: Manufacture and Applications
Markov, SN
Cheng, B
Zain, ASM
Asenov, A
2014
Statistical Study of Bias Temperature Instabilities by Means of 3D 'Atomistic' Simulation
Book:
Bias Temperature Instability for Devices and Circuits
Amoroso, SM
Gerer, L
Adamu-Lema, F
Markov, SN
Asenov, A
2013
Density Functional Tight Binding for Atomistic Modelling of Field-effect Transistors
Proceeding/Conference:
International CECAM-Workshop: Approximate Quantum Methods in the ab initio World
Markov, SN
2016
Paramameterization and Application of DFTB theory to the modelling of Fully Depleted Si-on-insulator MOSFETs
Proceeding/Conference:
International CECAM Workshop on Development of next generation accurate approximate DFT/B methods
Markov, SN
2015
Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions
Journal:
IEEE Electron Device Letters
Markov, Stanislav
Cheng, Binjie
Asenov, Asen
2012
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Proceeding/Conference:
2012 15th International Workshop on Computational Electronics, IWCE 2012
Amoroso, Salvatore Maria
Adamu-Lema, Fikru
Markov, Stanislav
Gerrer, Louis
Asenov, Asen
2012
Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs
Journal:
Microelectronics Reliability
Gerrer, L.
Markov, S.
Amoroso, S. M.
Adamu-Lema, F.
Asenov, A.
2012
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation
Proceeding/Conference:
European Solid-State Device Research Conference
Amoroso, Salvatore M.
Gerrer, Louis
Markov, Stanislav
Adamu-Lema, Fikru
Asenov, Asen
2012
Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants
Journal:
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Markov, Stanislav
Brown, Andrew R.
Cheng, Binjie
Roy, Gareth
Roy, Scott
Asenov, Asen
2007
On the sub-nm EOT scaling of high-κ gate stacks
Proceeding/Conference:
ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
Markov, S.
Roy, S.
Fiegna, C.
Sangiorgi, E.
Asenov, A.
2008
Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer
Proceeding/Conference:
Physica Status Solidi (A) Applications and Materials Science
Markov, Stanislav
Sushko, Peter V.
Roy, Scott
Fiegna, Claudio
Sangiorgi, Enrico
Shluger, Alexander L.
Asenov, Asen
2008
Analysis of silicon dioxide interface transition region in MOS structures
Proceeding/Conference:
2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Markov, S.
Barin, N.
Fiegna, C.
Roy, S.
Sangiorgi, E.
Asenov, A.
2007
Direct tunnelling gate leakage variability in Nano-CMOS transistors
Journal:
IEEE Transactions on Electron Devices
Markov, Stanislav
Roy, Scott
Asenov, Asen
2010
Back-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX
Journal:
IEEE Transactions on Electron Devices
Yang, Yunxiang
Markov, Stanislav
Cheng, Binjie
Zain, Anis Suhaila Mohd
Liu, Xiaoyan
Cheng, Asen
2013
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
Journal:
IEEE Transactions on Electron Devices
Adamu-Lema, Fikru
Compagnoni, Christian Monzio
Amoroso, Salvatore M.
Castellani, Niccolò
Gerrer, Louis
Markov, Stanislav
Spinelli, Alessandro S.
Lacaita, Andrea L.
Asenov, Asen
2013
Statistical variability in scaled generations of n-channel UTB-FD-SOI MOSFETs under the influence of RDF, LER, OTF and MGG
Proceeding/Conference:
Proceedings - IEEE International SOI Conference
Markov, Stanislav
Zain, Anis Suhaila Mohd
Cheng, Binjie
Asenov, Asen
2012