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TitleAuthor(s)Issue Date
 
2019
Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2013
 
2013
 
2013
 
2015
 
Device Modelling from Atom to Transistor: including the gate oxide
Proceeding/Conference:Australian Symposium on Computationally Enhanced Materials Design (ACEMD), 2016
2016
 
Device Modelling from Atoms to Transistor: including the gate oxide
Proceeding/Conference:Annual Conference of The Physical Society of Hong Kong
2016
 
2017
Towards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface
Proceeding/Conference:International Conference on Simulation of Semiconductor Processes and Devices Proceedings
2014
 
2014
 
2013
 
Density Functional Tight Binding for Atomistic Modelling of Field-effect Transistors
Proceeding/Conference:International CECAM-Workshop: Approximate Quantum Methods in the ab initio World
2016
 
Paramameterization and Application of DFTB theory to the modelling of Fully Depleted Si-on-insulator MOSFETs
Proceeding/Conference:International CECAM Workshop on Development of next generation accurate approximate DFT/B methods
2015
 
2012
3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
Proceeding/Conference:2012 15th International Workshop on Computational Electronics, IWCE 2012
2012
 
2012
2012
 
Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants
Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
2007
On the sub-nm EOT scaling of high-κ gate stacks
Proceeding/Conference:ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
2008
Si-SiO 2 interface band-gap transition - Effects on MOS inversion layer
Proceeding/Conference:Physica Status Solidi (A) Applications and Materials Science
2008
Analysis of silicon dioxide interface transition region in MOS structures
Proceeding/Conference:2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
2007
 
Direct tunnelling gate leakage variability in Nano-CMOS transistors
Journal:IEEE Transactions on Electron Devices
2010
 
2013
 
2013
2012