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Conference Paper: Density Functional Tight Binding for Atomistic Modelling of Field-effect Transistors

TitleDensity Functional Tight Binding for Atomistic Modelling of Field-effect Transistors
Authors
Markov, SN
Issue Date2016
Citation
International CECAM-Workshop: Approximate Quantum Methods in the ab initio World, Beijing Computational Science Research Center, Beijing, China, 8-11 November 2016 How to Cite?
DescriptionSession: Charge Transport and Dynamics
Persistent Identifierhttp://hdl.handle.net/10722/254337

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SN-
dc.date.accessioned2018-06-14T06:50:58Z-
dc.date.available2018-06-14T06:50:58Z-
dc.date.issued2016-
dc.identifier.citationInternational CECAM-Workshop: Approximate Quantum Methods in the ab initio World, Beijing Computational Science Research Center, Beijing, China, 8-11 November 2016-
dc.identifier.urihttp://hdl.handle.net/10722/254337-
dc.descriptionSession: Charge Transport and Dynamics-
dc.languageeng-
dc.relation.ispartofInternational CECAM-Workshop: Approximate Quantum Methods in the ab initio World-
dc.titleDensity Functional Tight Binding for Atomistic Modelling of Field-effect Transistors-
dc.typeConference_Paper-
dc.identifier.emailMarkov, SN: figaro@hku.hk-
dc.identifier.authorityMarkov, SN=rp02107-
dc.identifier.hkuros277096-

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