File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.4817911
- Scopus: eid_2-s2.0-84881656115
- WOS: WOS:000322908300043
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: A multi-scale modeling of junctionless field-effect transistors
Title | A multi-scale modeling of junctionless field-effect transistors |
---|---|
Authors | |
Issue Date | 2013 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2013, v. 103 n. 6, article no. 062109 How to Cite? |
Abstract | In this work, we simulate a realistic junctionless (JL) field-effect transistor using a multi-scale approach. Our approach features a combination of the first-principles atomistic calculation, semi-classical semiconductor device simulation, compact model generation, and circuit simulation. The transfer characteristics of JL transistors are simulated by a recently developed quantum mechanical/electromagnetics method, and good agreement is obtained compared to experiment. A compact model for JL transistors is then generated for subsequent circuit simulation. We demonstrate a multi-scale modeling framework for quantum mechanical effects in nano-scale devices for next generation electronic design automation. © 2013 AIP Publishing LLC. |
Persistent Identifier | http://hdl.handle.net/10722/188884 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yam, CY | en_US |
dc.contributor.author | Peng, J | en_US |
dc.contributor.author | Chen, Q | en_US |
dc.contributor.author | Markov, SN | en_US |
dc.contributor.author | Huang, J | en_US |
dc.contributor.author | Wong, N | en_US |
dc.contributor.author | Chew, WC | en_US |
dc.contributor.author | Chen, G | en_US |
dc.date.accessioned | 2013-09-17T14:19:47Z | - |
dc.date.available | 2013-09-17T14:19:47Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | Applied Physics Letters, 2013, v. 103 n. 6, article no. 062109 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/188884 | - |
dc.description.abstract | In this work, we simulate a realistic junctionless (JL) field-effect transistor using a multi-scale approach. Our approach features a combination of the first-principles atomistic calculation, semi-classical semiconductor device simulation, compact model generation, and circuit simulation. The transfer characteristics of JL transistors are simulated by a recently developed quantum mechanical/electromagnetics method, and good agreement is obtained compared to experiment. A compact model for JL transistors is then generated for subsequent circuit simulation. We demonstrate a multi-scale modeling framework for quantum mechanical effects in nano-scale devices for next generation electronic design automation. © 2013 AIP Publishing LLC. | - |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | - |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.rights | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 103 n. 6, article no. 062109 and may be found at https://doi.org/10.1063/1.4817911 | - |
dc.title | A multi-scale modeling of junctionless field-effect transistors | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yam, CY: yamcy1@hku.hk | en_US |
dc.identifier.email | Peng, J: kitpeng@hku.hk | en_US |
dc.identifier.email | Chen, Q: q1chen@hku.hk | en_US |
dc.identifier.email | Markov, SN: figaro@hku.hk | en_US |
dc.identifier.email | Huang, J: huangjun@eee.hku.hk | en_US |
dc.identifier.email | Wong, N: nwong@eee.hku.hk | en_US |
dc.identifier.email | Chew, WC: wcchew@hku.hk | en_US |
dc.identifier.email | Chen, G: ghc@yangtze.hku.hk | en_US |
dc.identifier.authority | Yam, CY=rp01399 | en_US |
dc.identifier.authority | Chen, Q=rp01688 | en_US |
dc.identifier.authority | Wong, N=rp00190 | en_US |
dc.identifier.authority | Chew, WC=rp00656 | en_US |
dc.identifier.authority | Chen, G=rp00671 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4817911 | - |
dc.identifier.scopus | eid_2-s2.0-84881656115 | - |
dc.identifier.hkuros | 222398 | en_US |
dc.identifier.volume | 103 | en_US |
dc.identifier.issue | 6 | en_US |
dc.identifier.spage | article no. 062109 | - |
dc.identifier.epage | article no. 062109 | - |
dc.identifier.isi | WOS:000322908300043 | - |
dc.identifier.issnl | 0003-6951 | - |