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Article: A multi-scale modeling of junctionless field-effect transistors

TitleA multi-scale modeling of junctionless field-effect transistors
Authors
Issue Date2013
Citation
Applied Physics Letters, 2013, v. 103 n. 6, p. 062109 How to Cite?
AbstractIn this work, we simulate a realistic junctionless (JL) field-effect transistor using a multi-scale approach. Our approach features a combination of the first-principles atomistic calculation, semi-classical semiconductor device simulation, compact model generation, and circuit simulation. The transfer characteristics of JL transistors are simulated by a recently developed quantum mechanical/electromagnetics method, and good agreement is obtained compared to experiment. A compact model for JL transistors is then generated for subsequent circuit simulation. We demonstrate a multi-scale modeling framework for quantum mechanical effects in nano-scale devices for next generation electronic design automation. © 2013 AIP Publishing LLC.
Persistent Identifierhttp://hdl.handle.net/10722/188884
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYam, CYen_US
dc.contributor.authorPeng, Jen_US
dc.contributor.authorChen, Qen_US
dc.contributor.authorMarkov, SNen_US
dc.contributor.authorHuang, Jen_US
dc.contributor.authorWong, Nen_US
dc.contributor.authorChew, WCen_US
dc.contributor.authorChen, Gen_US
dc.date.accessioned2013-09-17T14:19:47Z-
dc.date.available2013-09-17T14:19:47Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 103 n. 6, p. 062109en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/188884-
dc.description.abstractIn this work, we simulate a realistic junctionless (JL) field-effect transistor using a multi-scale approach. Our approach features a combination of the first-principles atomistic calculation, semi-classical semiconductor device simulation, compact model generation, and circuit simulation. The transfer characteristics of JL transistors are simulated by a recently developed quantum mechanical/electromagnetics method, and good agreement is obtained compared to experiment. A compact model for JL transistors is then generated for subsequent circuit simulation. We demonstrate a multi-scale modeling framework for quantum mechanical effects in nano-scale devices for next generation electronic design automation. © 2013 AIP Publishing LLC.-
dc.languageengen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleA multi-scale modeling of junctionless field-effect transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYam, CY: yamcy1@hku.hken_US
dc.identifier.emailPeng, J: kitpeng@hku.hken_US
dc.identifier.emailChen, Q: q1chen@hku.hken_US
dc.identifier.emailMarkov, SN: figaro@hku.hken_US
dc.identifier.emailHuang, J: huangjun@eee.hku.hken_US
dc.identifier.emailWong, N: nwong@eee.hku.hken_US
dc.identifier.emailChew, WC: wcchew@hku.hken_US
dc.identifier.emailChen, G: ghc@yangtze.hku.hken_US
dc.identifier.authorityYam, CY=rp01399en_US
dc.identifier.authorityChen, Q=rp01688en_US
dc.identifier.authorityWong, N=rp00190en_US
dc.identifier.authorityChew, WC=rp00656en_US
dc.identifier.authorityChen, G=rp00671en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4817911-
dc.identifier.scopuseid_2-s2.0-84881656115-
dc.identifier.hkuros222398en_US
dc.identifier.volume103en_US
dc.identifier.issue6en_US
dc.identifier.spage062109en_US
dc.identifier.epage062109en_US
dc.identifier.isiWOS:000322908300043-

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