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Book Chapter: Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology
Title | Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology |
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Authors | |
Keywords | statistical variability random dopant fluctuations metal gate granularity line edge roughness CMOS |
Issue Date | 2014 |
Publisher | Elsevier Science |
Citation | Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology. In Kononchuk, O & Nguyen, BY (Eds.), Silicon-On-Insulator (SOI) Technology: Manufacture and Applications, p. 212-242. Amsterdam: Elsevier Science, 2014 How to Cite? |
Abstract | Statistical variability in ultra-scaled CMOS devices is a major challenge faced by the semiconductor industry today. It has critical impact on functionality and yield, particularly of static random access memory (SRAM) circuits. This chapter focuses on the physical origins of statistical variability and their manifestation in fully depleted (FD) thin-body silicon-on-insulator (TB-SOI) transistors. We first review the major sources of statistical variability in CMOS devices. Then, the unique impact of statistical variability on TB-SOI technology is presented, drawing comparisons with conventional, bulk metal oxide semiconductor field effect transistor (MOSFET). Finally, based on a comparison study between TB-SOI and double gate technologies, the statistical aspects of reliability are discussed. |
Persistent Identifier | http://hdl.handle.net/10722/202027 |
ISBN | |
Series/Report no. | Woodhead Publishing series in electronic and optical materials |
DC Field | Value | Language |
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dc.contributor.author | Markov, SN | en_US |
dc.contributor.author | Cheng, B | en_US |
dc.contributor.author | Zain, ASM | en_US |
dc.contributor.author | Asenov, A | en_US |
dc.date.accessioned | 2014-08-21T07:58:38Z | - |
dc.date.available | 2014-08-21T07:58:38Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.citation | Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology. In Kononchuk, O & Nguyen, BY (Eds.), Silicon-On-Insulator (SOI) Technology: Manufacture and Applications, p. 212-242. Amsterdam: Elsevier Science, 2014 | en_US |
dc.identifier.isbn | 9780857095268 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/202027 | - |
dc.description.abstract | Statistical variability in ultra-scaled CMOS devices is a major challenge faced by the semiconductor industry today. It has critical impact on functionality and yield, particularly of static random access memory (SRAM) circuits. This chapter focuses on the physical origins of statistical variability and their manifestation in fully depleted (FD) thin-body silicon-on-insulator (TB-SOI) transistors. We first review the major sources of statistical variability in CMOS devices. Then, the unique impact of statistical variability on TB-SOI technology is presented, drawing comparisons with conventional, bulk metal oxide semiconductor field effect transistor (MOSFET). Finally, based on a comparison study between TB-SOI and double gate technologies, the statistical aspects of reliability are discussed. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier Science | en_US |
dc.relation.ispartof | Silicon-On-Insulator (SOI) Technology: Manufacture and Applications | en_US |
dc.relation.ispartofseries | Woodhead Publishing series in electronic and optical materials | - |
dc.subject | statistical variability | - |
dc.subject | random dopant fluctuations | - |
dc.subject | metal gate granularity | - |
dc.subject | line edge roughness | - |
dc.subject | CMOS | - |
dc.title | Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology | en_US |
dc.type | Book_Chapter | en_US |
dc.identifier.email | Markov, SN: figaro@hku.hk | en_US |
dc.identifier.doi | 10.1533/9780857099259.1.212 | en_US |
dc.identifier.hkuros | 234405 | en_US |
dc.identifier.spage | 212 | - |
dc.identifier.epage | 242 | - |
dc.publisher.place | Amsterdam | - |