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Conference Paper: Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation

TitleComprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation
Authors
Issue Date2012
Citation
European Solid-State Device Research Conference, 2012, p. 109-112 How to Cite?
AbstractWe present a thorough statistical investigation of random telegraph noise (RTN) and bias temperature instabilities (BTI) in nanoscale MOSFETs. By means of 3D TCAD atomistic simulations, we evaluate the statistical distribution in capture/emission time constants and in threshold voltage shift (ΔV T) amplitudes due to single trapped charge, comparing its impact on RTN and BTI. Our analysis shows that, neglecting any impact of charge trapping on trans-characteristic degradation, the individual BTI ΔVT steps are distributed identically as the RTN ΔVT steps. However, the individual traps in a device cannot be considered as uncorrelated sources of noise because their mutual interaction is fundamental in determining the dispersion of capture/emission time constants in BTI simulation. These results are of utmost importance for profoundly understanding the differences and similarities in the statistical behavior of RTN and BTI phenomena. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221323
ISSN

 

DC FieldValueLanguage
dc.contributor.authorAmoroso, Salvatore M.-
dc.contributor.authorGerrer, Louis-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorAdamu-Lema, Fikru-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:09:00Z-
dc.date.available2015-11-18T06:09:00Z-
dc.date.issued2012-
dc.identifier.citationEuropean Solid-State Device Research Conference, 2012, p. 109-112-
dc.identifier.issn1930-8876-
dc.identifier.urihttp://hdl.handle.net/10722/221323-
dc.description.abstractWe present a thorough statistical investigation of random telegraph noise (RTN) and bias temperature instabilities (BTI) in nanoscale MOSFETs. By means of 3D TCAD atomistic simulations, we evaluate the statistical distribution in capture/emission time constants and in threshold voltage shift (ΔV T) amplitudes due to single trapped charge, comparing its impact on RTN and BTI. Our analysis shows that, neglecting any impact of charge trapping on trans-characteristic degradation, the individual BTI ΔVT steps are distributed identically as the RTN ΔVT steps. However, the individual traps in a device cannot be considered as uncorrelated sources of noise because their mutual interaction is fundamental in determining the dispersion of capture/emission time constants in BTI simulation. These results are of utmost importance for profoundly understanding the differences and similarities in the statistical behavior of RTN and BTI phenomena. © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartofEuropean Solid-State Device Research Conference-
dc.titleComprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D atomistic simulation-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ESSDERC.2012.6343345-
dc.identifier.scopuseid_2-s2.0-84870589726-
dc.identifier.spage109-
dc.identifier.epage112-

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