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Conference Paper: Towards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface

TitleTowards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface
Authors
Issue Date2014
PublisherI E E E.
Citation
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 September 2014. In International Conference on Simulation of Semiconductor Processes and Devices Proceedings, 2014, p. 65-68 How to Cite?
AbstractWe report a milestone in device modeling whereby a planar MOSFET with extremely thin silicon on insulator channel is simulated at the atomic level, including significant parts of the gate and buried oxides explicitly in the simulation domain, in ab initio fashion, i.e without material or geometrical parameters. We use the density-functional-based tight-binding formalism for constructing the device Hamiltonian, and non-equilibrium Green's functions formalism for calculating electron current. Simulations of Si/SiO2 super-cells agree very well with experimentally observed band-structure phenomena in SiO2-confined sub-6 nm thick Si films. Device simulations of ETSOI MOSFET with 3 nm channel length and sub-nm channel thickness also agree well with reported measurements of the transfer characteristics of a similar transistor.
Persistent Identifierhttp://hdl.handle.net/10722/201195
ISBN

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SNen_US
dc.contributor.authorAradi, Ben_US
dc.contributor.authorYam, CYen_US
dc.contributor.authorChen, Gen_US
dc.contributor.authorFrauenheim, Ten_US
dc.date.accessioned2014-08-21T07:17:25Z-
dc.date.available2014-08-21T07:17:25Z-
dc.date.issued2014en_US
dc.identifier.citationInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, 9-11 September 2014. In International Conference on Simulation of Semiconductor Processes and Devices Proceedings, 2014, p. 65-68en_US
dc.identifier.isbn9781479952878-
dc.identifier.urihttp://hdl.handle.net/10722/201195-
dc.description.abstractWe report a milestone in device modeling whereby a planar MOSFET with extremely thin silicon on insulator channel is simulated at the atomic level, including significant parts of the gate and buried oxides explicitly in the simulation domain, in ab initio fashion, i.e without material or geometrical parameters. We use the density-functional-based tight-binding formalism for constructing the device Hamiltonian, and non-equilibrium Green's functions formalism for calculating electron current. Simulations of Si/SiO2 super-cells agree very well with experimentally observed band-structure phenomena in SiO2-confined sub-6 nm thick Si films. Device simulations of ETSOI MOSFET with 3 nm channel length and sub-nm channel thickness also agree well with reported measurements of the transfer characteristics of a similar transistor.en_US
dc.languageengen_US
dc.publisherI E E E.en_US
dc.relation.ispartofInternational Conference on Simulation of Semiconductor Processes and Devices Proceedingsen_US
dc.rightsInternational Conference on Simulation of Semiconductor Processes and Devices Proceedings. Copyright © I E E E.en_US
dc.rights©2014 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleTowards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interfaceen_US
dc.typeConference_Paperen_US
dc.identifier.emailMarkov, SN: figaro@hku.hken_US
dc.identifier.emailYam, CY: yamcy1@hku.hken_US
dc.identifier.emailChen, G: ghc@yangtze.hku.hken_US
dc.identifier.authorityYam, CY=rp01399en_US
dc.identifier.authorityChen, G=rp00671en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/SISPAD.2014.6931564-
dc.identifier.scopuseid_2-s2.0-84908687485-
dc.identifier.hkuros234560en_US
dc.identifier.spage65-
dc.identifier.epage68-
dc.publisher.placeUnited States-

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