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Article: Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs

TitleAccuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs
Authors
Keywordsrandom telegraph noise (RTN)
semiconductor device modeling
variability
Atomistic doping
MOSFETs
Issue Date2013
Citation
IEEE Transactions on Electron Devices, 2013, v. 60, n. 2, p. 833-839 How to Cite?
AbstractThis paper investigates the limitations to the accuracy and the main issues of the spectroscopic analyses of random telegraph noise (RTN) traps in nanoscale MOSFETs. First, the impact of the major variability sources affecting decananometer MOSFET performance on both the RTN time constants and the trap depth estimation is studied as a function of the gate overdrive. Results reveal that atomistic doping and metal gate granularity broaden the statistical distribution of the RTN time constants far more than what comes from the random position of the RTN trap in the 3-D device electrostatics, contributing, in turn, to a significant reduction of the accuracy of trap spectroscopy. The accuracy is shown to improve the higher is the gate overdrive, owing to a more uniform and gate-bias-independent surface potential in the channel, with, however, the possible drawback of triggering the simultaneous trap interaction with both the channel and the gate. This simultaneous interaction is, finally, shown to critically compromise trap spectroscopy in thin-oxide devices. © 1963-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221389
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorAdamu-Lema, Fikru-
dc.contributor.authorCompagnoni, Christian Monzio-
dc.contributor.authorAmoroso, Salvatore M.-
dc.contributor.authorCastellani, Niccolò-
dc.contributor.authorGerrer, Louis-
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorSpinelli, Alessandro S.-
dc.contributor.authorLacaita, Andrea L.-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:09:11Z-
dc.date.available2015-11-18T06:09:11Z-
dc.date.issued2013-
dc.identifier.citationIEEE Transactions on Electron Devices, 2013, v. 60, n. 2, p. 833-839-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/221389-
dc.description.abstractThis paper investigates the limitations to the accuracy and the main issues of the spectroscopic analyses of random telegraph noise (RTN) traps in nanoscale MOSFETs. First, the impact of the major variability sources affecting decananometer MOSFET performance on both the RTN time constants and the trap depth estimation is studied as a function of the gate overdrive. Results reveal that atomistic doping and metal gate granularity broaden the statistical distribution of the RTN time constants far more than what comes from the random position of the RTN trap in the 3-D device electrostatics, contributing, in turn, to a significant reduction of the accuracy of trap spectroscopy. The accuracy is shown to improve the higher is the gate overdrive, owing to a more uniform and gate-bias-independent surface potential in the channel, with, however, the possible drawback of triggering the simultaneous trap interaction with both the channel and the gate. This simultaneous interaction is, finally, shown to critically compromise trap spectroscopy in thin-oxide devices. © 1963-2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectrandom telegraph noise (RTN)-
dc.subjectsemiconductor device modeling-
dc.subjectvariability-
dc.subjectAtomistic doping-
dc.subjectMOSFETs-
dc.titleAccuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2012.2230004-
dc.identifier.scopuseid_2-s2.0-84872867677-
dc.identifier.volume60-
dc.identifier.issue2-
dc.identifier.spage833-
dc.identifier.epage839-

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