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Article: Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants

TitleThree-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants
Authors
Keywords3D modelling and simulation
Oxide thickness variation
MOSFET
Interface roughness
Gate leakage fluctuations
Direct tunnelling
Random dopant
Issue Date2007
Citation
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, v. 46, n. 4 B, p. 2112-2116 How to Cite?
AbstractA three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal-oxide-semiconductor field effect transistors (MPSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example 25 nm gate length MPSFET. OTV is the primary source of gate leakage fluctuations at high gate voltage, while RD are the main factor at high drain voltage. Both OTV and RD contribute to an average increase in the magnitude of the gate leakage with respect to that of a uniform device. This reflects the exponential sensitivity of the direct tunnelling current. ©2007 The Japan Society of Applied Physics.
Persistent Identifierhttp://hdl.handle.net/10722/221310
ISSN
2015 Impact Factor: 1.122
2015 SCImago Journal Rankings: 0.258

 

DC FieldValueLanguage
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorBrown, Andrew R.-
dc.contributor.authorCheng, Binjie-
dc.contributor.authorRoy, Gareth-
dc.contributor.authorRoy, Scott-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:08:57Z-
dc.date.available2015-11-18T06:08:57Z-
dc.date.issued2007-
dc.identifier.citationJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, v. 46, n. 4 B, p. 2112-2116-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10722/221310-
dc.description.abstractA three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal-oxide-semiconductor field effect transistors (MPSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example 25 nm gate length MPSFET. OTV is the primary source of gate leakage fluctuations at high gate voltage, while RD are the main factor at high drain voltage. Both OTV and RD contribute to an average increase in the magnitude of the gate leakage with respect to that of a uniform device. This reflects the exponential sensitivity of the direct tunnelling current. ©2007 The Japan Society of Applied Physics.-
dc.languageeng-
dc.relation.ispartofJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers-
dc.subject3D modelling and simulation-
dc.subjectOxide thickness variation-
dc.subjectMOSFET-
dc.subjectInterface roughness-
dc.subjectGate leakage fluctuations-
dc.subjectDirect tunnelling-
dc.subjectRandom dopant-
dc.titleThree-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1143/JJAP.46.2112-
dc.identifier.scopuseid_2-s2.0-34547889184-
dc.identifier.volume46-
dc.identifier.issue4 B-
dc.identifier.spage2112-
dc.identifier.epage2116-
dc.identifier.eissn1347-4065-

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