File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1109/LED.2011.2179114
- Scopus: eid_2-s2.0-84857453989
- WOS: WOS:000300580000005
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions
Title | Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions |
---|---|
Authors | |
Keywords | Fully depleted silicon-on-insulator (SOI) random dopant fluctuations statistical device variability |
Issue Date | 2012 |
Citation | IEEE Electron Device Letters, 2012, v. 33, n. 3, p. 315-317 How to Cite? |
Abstract | Simulations of up to 10000 fully depleted thin-body silicon-on-insulator MOSFETs show that the standard deviation of the threshold voltage cannot be adequately used as a sole metric of device variability in such transistors. This is due to a sharp departure from normality of the threshold voltage distribution, and an enhanced influence of the source/drain-dopant fluctuations on the on-current and short-channel effects of the fully depleted thin-body silicon-on-insulator transistors. Both aspects have great ramifications for statistical compact models and for low-power SRAM designs. © 2012 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221326 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Markov, Stanislav | - |
dc.contributor.author | Cheng, Binjie | - |
dc.contributor.author | Asenov, Asen | - |
dc.date.accessioned | 2015-11-18T06:09:00Z | - |
dc.date.available | 2015-11-18T06:09:00Z | - |
dc.date.issued | 2012 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2012, v. 33, n. 3, p. 315-317 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221326 | - |
dc.description.abstract | Simulations of up to 10000 fully depleted thin-body silicon-on-insulator MOSFETs show that the standard deviation of the threshold voltage cannot be adequately used as a sole metric of device variability in such transistors. This is due to a sharp departure from normality of the threshold voltage distribution, and an enhanced influence of the source/drain-dopant fluctuations on the on-current and short-channel effects of the fully depleted thin-body silicon-on-insulator transistors. Both aspects have great ramifications for statistical compact models and for low-power SRAM designs. © 2012 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | Fully depleted silicon-on-insulator (SOI) | - |
dc.subject | random dopant fluctuations | - |
dc.subject | statistical device variability | - |
dc.title | Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/LED.2011.2179114 | - |
dc.identifier.scopus | eid_2-s2.0-84857453989 | - |
dc.identifier.volume | 33 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 315 | - |
dc.identifier.epage | 317 | - |
dc.identifier.isi | WOS:000300580000005 | - |
dc.identifier.issnl | 0741-3106 | - |