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Article: Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions

TitleStatistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions
Authors
KeywordsFully depleted silicon-on-insulator (SOI)
random dopant fluctuations
statistical device variability
Issue Date2012
Citation
IEEE Electron Device Letters, 2012, v. 33, n. 3, p. 315-317 How to Cite?
AbstractSimulations of up to 10000 fully depleted thin-body silicon-on-insulator MOSFETs show that the standard deviation of the threshold voltage cannot be adequately used as a sole metric of device variability in such transistors. This is due to a sharp departure from normality of the threshold voltage distribution, and an enhanced influence of the source/drain-dopant fluctuations on the on-current and short-channel effects of the fully depleted thin-body silicon-on-insulator transistors. Both aspects have great ramifications for statistical compact models and for low-power SRAM designs. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221326
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791

 

DC FieldValueLanguage
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorCheng, Binjie-
dc.contributor.authorAsenov, Asen-
dc.date.accessioned2015-11-18T06:09:00Z-
dc.date.available2015-11-18T06:09:00Z-
dc.date.issued2012-
dc.identifier.citationIEEE Electron Device Letters, 2012, v. 33, n. 3, p. 315-317-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/221326-
dc.description.abstractSimulations of up to 10000 fully depleted thin-body silicon-on-insulator MOSFETs show that the standard deviation of the threshold voltage cannot be adequately used as a sole metric of device variability in such transistors. This is due to a sharp departure from normality of the threshold voltage distribution, and an enhanced influence of the source/drain-dopant fluctuations on the on-current and short-channel effects of the fully depleted thin-body silicon-on-insulator transistors. Both aspects have great ramifications for statistical compact models and for low-power SRAM designs. © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectFully depleted silicon-on-insulator (SOI)-
dc.subjectrandom dopant fluctuations-
dc.subjectstatistical device variability-
dc.titleStatistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2011.2179114-
dc.identifier.scopuseid_2-s2.0-84857453989-
dc.identifier.volume33-
dc.identifier.issue3-
dc.identifier.spage315-
dc.identifier.epage317-

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